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Leitsmann, Roman, Lazarevic, Florian, Nadimi, Ebrahim, Öttking, Rolf, Plänitz, Philipp, Erben, Elke (2015) Charge transition levels of oxygen, lanthanum, and fluorine related defect structures in bulk hafnium dioxide (HfO2): An ab initio investigation. Journal of Applied Physics, 117 (24). 244503pp. doi:10.1063/1.4923220

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Reference TypeJournal (article/letter/editorial)
TitleCharge transition levels of oxygen, lanthanum, and fluorine related defect structures in bulk hafnium dioxide (HfO2): An ab initio investigation
JournalJournal of Applied Physics
AuthorsLeitsmann, RomanAuthor
Lazarevic, FlorianAuthor
Nadimi, EbrahimAuthor
Öttking, RolfAuthor
Plänitz, PhilippAuthor
Erben, ElkeAuthor
Year2015 (June 28)Volume117
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.4923220Search in ResearchGate
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Mindat Ref. ID5202076Long-form Identifiermindat:1:5:5202076:0
GUID0
Full ReferenceLeitsmann, Roman, Lazarevic, Florian, Nadimi, Ebrahim, Öttking, Rolf, Plänitz, Philipp, Erben, Elke (2015) Charge transition levels of oxygen, lanthanum, and fluorine related defect structures in bulk hafnium dioxide (HfO2): An ab initio investigation. Journal of Applied Physics, 117 (24). 244503pp. doi:10.1063/1.4923220
Plain TextLeitsmann, Roman, Lazarevic, Florian, Nadimi, Ebrahim, Öttking, Rolf, Plänitz, Philipp, Erben, Elke (2015) Charge transition levels of oxygen, lanthanum, and fluorine related defect structures in bulk hafnium dioxide (HfO2): An ab initio investigation. Journal of Applied Physics, 117 (24). 244503pp. doi:10.1063/1.4923220
In(2015, June) Journal of Applied Physics Vol. 117 (24) AIP Publishing

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Öttking, Rolf, Kupke, Steve, Nadimi, Ebrahim, Leitsmann, Roman, Lazarevic, Florian, Plänitz, Philipp, Roll, Guntrade, Slesazeck, Stefan, Trentzsch, Martin, Mikolajick, Thomas (2015) Defect generation and activation processes in HfO2thin films: Contributions to stress-induced leakage currents. physica status solidi (a), 212 (3). 547-553 doi:10.1002/pssa.201431697
Leitsmann, Roman, Lazarevic, Florian, Drescher, Maximilian, Erben, Elke (2017) Modeling the effects of lanthanum, nitrogen, and fluorine treatments of Si-SiON-HfO2-TiN gate stacks in 28 nm high-k-metal gate technology. Journal of Applied Physics, 121 (23). 234501pp. doi:10.1063/1.4986494
Nadimi, Ebrahim, Öttking, Rolf, Plänitz, Philipp, Trentzsch, Martin, Kelwing, Torben, Carter, Rick, Schreiber, Michael, Radehaus, Christian (2011) Interaction of oxygen vacancies and lanthanum in Hf-based high-kdielectrics: anab initioinvestigation. Journal of Physics: Condensed Matter, 23 (36). 365502pp. doi:10.1088/0953-8984/23/36/365502
Leitsmann, R., Chicker, F., Plänitz, Ph., Radehaus, C., Kretzer, U., Scheffer-Czygan, M., Eichler, S. (2011) Boron-Silicon complex defects in GaAs: An ab initio study. Journal of Applied Physics, 109 (6). 63533pp. doi:10.1063/1.3561373
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Tang, C., Ramprasad, R. (2007) Oxygen pressure dependence of HfO2 stoichiometry: An ab initio investigation. Applied Physics Letters, 91 (2). 22904pp. doi:10.1063/1.2756107
Riefer, Arthur, Hackert-Oschätzchen, Matthias, Plänitz, Philipp, Meichsner, Gunnar (2024) Characterization of iron(III) in aqueous and alkaline environments with ab initio and ReaxFF potentials. The Journal of Chemical Physics, 160 (8) doi:10.1063/5.0182460
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Nadimi, Ebrahim, Schreiber, Michael (2017) The influence of lanthanum doping on the band alignment in Si/SiO2 /HfO2 gate stack of nano-MOSFETs: A first principles investigation. physica status solidi (b), 254 (10). 1700147pp. doi:10.1002/pssb.201700147
Geng, Hua Y., Chen, Ying, Kaneta, Yasunori, Kinoshita, Motoyasu (2008) Ab initio investigation on oxygen defect clusters in UO2+x. Applied Physics Letters, 93 (20). 201903pp. doi:10.1063/1.3035846
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