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Winter, R., Krylov, I., Cytermann, C., Tang, K., Ahn, J., McIntyre, P. C., Eizenberg, M. (2015) Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing. Journal of Applied Physics, 118 (5). 55302pp. doi:10.1063/1.4928158

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Reference TypeJournal (article/letter/editorial)
TitleFermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing
JournalJournal of Applied Physics
AuthorsWinter, R.Author
Krylov, I.Author
Cytermann, C.Author
Tang, K.Author
Ahn, J.Author
McIntyre, P. C.Author
Eizenberg, M.Author
Year2015 (August 7)Volume118
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.4928158Search in ResearchGate
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Mindat Ref. ID5203608Long-form Identifiermindat:1:5:5203608:0
GUID0
Full ReferenceWinter, R., Krylov, I., Cytermann, C., Tang, K., Ahn, J., McIntyre, P. C., Eizenberg, M. (2015) Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing. Journal of Applied Physics, 118 (5). 55302pp. doi:10.1063/1.4928158
Plain TextWinter, R., Krylov, I., Cytermann, C., Tang, K., Ahn, J., McIntyre, P. C., Eizenberg, M. (2015) Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing. Journal of Applied Physics, 118 (5). 55302pp. doi:10.1063/1.4928158
In(2015, August) Journal of Applied Physics Vol. 118 (5) AIP Publishing

See Also

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Winter, R., Krylov, I., Ahn, J., McIntyre, P. C., Eizenberg, M. (2014) The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack. Applied Physics Letters, 104 (20). 202103pp. doi:10.1063/1.4879246
Palumbo, F., Winter, R., Tang, K., McIntyre, P. C., Eizenberg, M. (2017) Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors. Journal of Applied Physics, 121 (17). 174105pp. doi:10.1063/1.4982912
Tang, Kechao, Winter, Roy, Zhang, Liangliang, Droopad, Ravi, Eizenberg, Moshe, McIntyre, Paul C. (2015) Border trap reduction in Al2O3/InGaAs gate stacks. Applied Physics Letters, 107 (20). 202102pp. doi:10.1063/1.4936100
Palumbo, F., Krylov, I., Eizenberg, M. (2015) Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks. Journal of Applied Physics, 117 (10). 104103pp. doi:10.1063/1.4914492
Krylov, Igor, Ritter, Dan, Eizenberg, Moshe (2015) The dispersion in accumulation at InGaAs-based metal/oxide/semiconductor gate stacks with a bi-layered dielectric structure. Journal of Applied Physics, 118 (8). 84502pp. doi:10.1063/1.4928960
Ahn, Jaesoo, Geppert, Irina, Gunji, Marika, Holland, Martin, Thayne, Iain, Eizenberg, Moshe, McIntyre, Paul C. (2011) Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices. Applied Physics Letters, 99 (23). 232902pp. doi:10.1063/1.3662966
Palumbo, F., Winter, R., Krylov, I., Eizenberg, M. (2014) Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks. Applied Physics Letters, 104 (25). 252907pp. doi:10.1063/1.4885535
Tang, K., Scheuermann, A. G., Zhang, L., McIntyre, P. C. (2017) Series resistance and gate leakage correction for improved border trap analysis of Al2O3/InGaAs gate stacks. Journal of Applied Physics, 122 (9). 94503pp. doi:10.1063/1.5000359
Krylov, Igor, Ritter, Dan, Eizenberg, Moshe (2015) The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks. Journal of Applied Physics, 117 (17). 174501pp. doi:10.1063/1.4919600
Kim, I., Han, S. K., Osburn, C. M. (2004) Effect of Post-metallization Annealing for Alternative Gate Stack Devices. Journal of the Electrochemical Society, 151. doi:10.1149/1.1636181
Krylov, Igor, Winter, Roy, Ritter, Dan, Eizenberg, Moshe (2014) Indium out-diffusion in Al2O3/InGaAs stacks during anneal at different ambient conditions. Applied Physics Letters, 104 (24). 243504pp. doi:10.1063/1.4882645
 
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