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Zhu, Miao, Li, Xinming, Li, Xiao, Zang, Xiaobei, Zhen, Zhen, Xie, Dan, Fang, Ying, Zhu, Hongwei (2016) Schottky diode characteristics and 1/f noise of high sensitivity reduced graphene oxide/Si heterojunction photodetector. Journal of Applied Physics, 119 (12). 124303pp. doi:10.1063/1.4944945

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Reference TypeJournal (article/letter/editorial)
TitleSchottky diode characteristics and 1/f noise of high sensitivity reduced graphene oxide/Si heterojunction photodetector
JournalJournal of Applied Physics
AuthorsZhu, MiaoAuthor
Li, XinmingAuthor
Li, XiaoAuthor
Zang, XiaobeiAuthor
Zhen, ZhenAuthor
Xie, DanAuthor
Fang, YingAuthor
Zhu, HongweiAuthor
Year2016 (March 28)Volume119
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.4944945Search in ResearchGate
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Mindat Ref. ID5204039Long-form Identifiermindat:1:5:5204039:3
GUID0
Full ReferenceZhu, Miao, Li, Xinming, Li, Xiao, Zang, Xiaobei, Zhen, Zhen, Xie, Dan, Fang, Ying, Zhu, Hongwei (2016) Schottky diode characteristics and 1/f noise of high sensitivity reduced graphene oxide/Si heterojunction photodetector. Journal of Applied Physics, 119 (12). 124303pp. doi:10.1063/1.4944945
Plain TextZhu, Miao, Li, Xinming, Li, Xiao, Zang, Xiaobei, Zhen, Zhen, Xie, Dan, Fang, Ying, Zhu, Hongwei (2016) Schottky diode characteristics and 1/f noise of high sensitivity reduced graphene oxide/Si heterojunction photodetector. Journal of Applied Physics, 119 (12). 124303pp. doi:10.1063/1.4944945
In(2016, March) Journal of Applied Physics Vol. 119 (12) AIP Publishing

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