Yacoub, H., Fahle, D., Eickelkamp, M., Wille, A., Mauder, C., Heuken, M., Kalisch, H., Vescan, A. (2016) Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors. Journal of Applied Physics, 119 (13). 135704pp. doi:10.1063/1.4944885
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors | ||
| Journal | Journal of Applied Physics | ||
| Authors | Yacoub, H. | Author | |
| Fahle, D. | Author | ||
| Eickelkamp, M. | Author | ||
| Wille, A. | Author | ||
| Mauder, C. | Author | ||
| Heuken, M. | Author | ||
| Kalisch, H. | Author | ||
| Vescan, A. | Author | ||
| Year | 2016 (April 7) | Volume | 119 |
| Issue | 13 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.4944885Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5204057 | Long-form Identifier | mindat:1:5:5204057:9 |
| GUID | 0 | ||
| Full Reference | Yacoub, H., Fahle, D., Eickelkamp, M., Wille, A., Mauder, C., Heuken, M., Kalisch, H., Vescan, A. (2016) Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors. Journal of Applied Physics, 119 (13). 135704pp. doi:10.1063/1.4944885 | ||
| Plain Text | Yacoub, H., Fahle, D., Eickelkamp, M., Wille, A., Mauder, C., Heuken, M., Kalisch, H., Vescan, A. (2016) Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors. Journal of Applied Physics, 119 (13). 135704pp. doi:10.1063/1.4944885 | ||
| In | (2016, April) Journal of Applied Physics Vol. 119 (13) AIP Publishing | ||
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