Vote for your favorite mineral in #MinCup25! - Pectolite vs. Haüyne
It's a pair of striking blue beauties as #pectolite the uncrushable faces off against #hauyne, the phoenix from volcanic ashes!
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Krylov, Igor, Pokroy, Boaz, Ritter, Dan, Eizenberg, Moshe (2016) A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs. Journal of Applied Physics, 119 (8). 84507pp. doi:10.1063/1.4942657

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleA comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
JournalJournal of Applied Physics
AuthorsKrylov, IgorAuthor
Pokroy, BoazAuthor
Ritter, DanAuthor
Eizenberg, MosheAuthor
Year2016 (February 28)Volume119
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.4942657Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5204997Long-form Identifiermindat:1:5:5204997:8
GUID0
Full ReferenceKrylov, Igor, Pokroy, Boaz, Ritter, Dan, Eizenberg, Moshe (2016) A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs. Journal of Applied Physics, 119 (8). 84507pp. doi:10.1063/1.4942657
Plain TextKrylov, Igor, Pokroy, Boaz, Ritter, Dan, Eizenberg, Moshe (2016) A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs. Journal of Applied Physics, 119 (8). 84507pp. doi:10.1063/1.4942657
In(2016, February) Journal of Applied Physics Vol. 119 (8) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Krylov, Igor, Pokroy, Boaz, Eizenberg, Moshe, Ritter, Dan (2016) A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors. Journal of Applied Physics, 120 (12). 124505pp. doi:10.1063/1.4962855
Krylov, Igor, Eizenberg, Moshe, Ritter, Dan (2014) Determination of the dielectric constant of InGaAs based gate stacks by a modified thickness series method. Applied Physics Letters, 105 (20). 203506pp. doi:10.1063/1.4902114
Krylov, Igor, Ritter, Dan, Eizenberg, Moshe (2015) The dispersion in accumulation at InGaAs-based metal/oxide/semiconductor gate stacks with a bi-layered dielectric structure. Journal of Applied Physics, 118 (8). 84502pp. doi:10.1063/1.4928960
Krylov, Igor, Ritter, Dan, Eizenberg, Moshe (2015) The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks. Journal of Applied Physics, 117 (17). 174501pp. doi:10.1063/1.4919600
Krylov, Igor, Winter, Roy, Ritter, Dan, Eizenberg, Moshe (2014) Indium out-diffusion in Al2O3/InGaAs stacks during anneal at different ambient conditions. Applied Physics Letters, 104 (24). 243504pp. doi:10.1063/1.4882645
Krylov, Igor, Gavrilov, Arkady, Ritter, Dan, Eizenberg, Moshe (2011) Elimination of the weak inversion hump in Si3N4/InGaAs (001) gate stacks using an in situ NH3 pre-treatment. Applied Physics Letters, 99 (20). 203504pp. doi:10.1063/1.3662035
Krylov, Igor, Ritter, Dan, Eizenberg, Moshe (2017) HfxAlyO ternary dielectrics for InGaAs based metal-oxide-semiconductor capacitors. Journal of Applied Physics, 122 (3). 34505pp. doi:10.1063/1.4993905
Krylov, Igor, Ritter, Dan, Eizenberg, Moshe (2015) The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks. Applied Physics Letters, 107 (10). 103503pp. doi:10.1063/1.4930202
Krylov, Igor, Korchnoy, Valentina, Xu, Xianbin, Weinfeld, Kamira, Yalon, Eilam, Ritter, Dan, Eizenberg, Moshe (2020) Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect. Journal of Applied Physics, 128 (6) 65301pp. doi:10.1063/5.0015961
Krylov, Igor, Gavrilov, Arkady, Eizenberg, Moshe, Ritter, Dan (2013) Indium outdiffusion and leakage degradation in metal/Al2O3/In0.53Ga0.47As capacitors. Applied Physics Letters, 103 (5). 53502pp. doi:10.1063/1.4816588
Krylov, Igor, Gavrilov, Arkady, Eizenberg, Moshe, Ritter, Dan (2012) Correlation between Ga-O signature and midgap states at the Al2O3/In0.53Ga0.47As interface. Applied Physics Letters, 101 (6). 63504pp. doi:10.1063/1.4745012
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 17, 2025 14:01:32
Go to top of page