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Weiss, Charlotte, Schnabel, Manuel, Prucnal, Slawomir, Hofmann, Johannes, Reichert, Andreas, Fehrenbach, Tobias, Skorupa, Wolfgang, Janz, Stefan (2016) Formation of silicon nanocrystals in silicon carbide using flash lamp annealing. Journal of Applied Physics, 120 (10). 105103pp. doi:10.1063/1.4962262

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Reference TypeJournal (article/letter/editorial)
TitleFormation of silicon nanocrystals in silicon carbide using flash lamp annealing
JournalJournal of Applied Physics
AuthorsWeiss, CharlotteAuthor
Schnabel, ManuelAuthor
Prucnal, SlawomirAuthor
Hofmann, JohannesAuthor
Reichert, AndreasAuthor
Fehrenbach, TobiasAuthor
Skorupa, WolfgangAuthor
Janz, StefanAuthor
Year2016 (September 14)Volume120
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.4962262Search in ResearchGate
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Mindat Ref. ID5205145Long-form Identifiermindat:1:5:5205145:0
GUID0
Full ReferenceWeiss, Charlotte, Schnabel, Manuel, Prucnal, Slawomir, Hofmann, Johannes, Reichert, Andreas, Fehrenbach, Tobias, Skorupa, Wolfgang, Janz, Stefan (2016) Formation of silicon nanocrystals in silicon carbide using flash lamp annealing. Journal of Applied Physics, 120 (10). 105103pp. doi:10.1063/1.4962262
Plain TextWeiss, Charlotte, Schnabel, Manuel, Prucnal, Slawomir, Hofmann, Johannes, Reichert, Andreas, Fehrenbach, Tobias, Skorupa, Wolfgang, Janz, Stefan (2016) Formation of silicon nanocrystals in silicon carbide using flash lamp annealing. Journal of Applied Physics, 120 (10). 105103pp. doi:10.1063/1.4962262
In(2016, September) Journal of Applied Physics Vol. 120 (10) AIP Publishing

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Weiss, Charlotte, Schnabel, Manuel, Reichert, Andreas, Löper, Philipp, Janz, Stefan (2015) Structural and optical properties of silicon nanocrystals embedded in silicon carbide: Comparison of single layers and multilayer structures. Applied Surface Science, 351. 550-557 doi:10.1016/j.apsusc.2015.05.153
Wutzler, Rene, Rebohle, Lars, Prucnal, Slawomir, Grenzer, Jörg, HĂŒbner, RenĂ©, Böttger, Roman, Skorupa, Wolfgang, Helm, Manfred (2017) Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing. New Journal of Physics, 19. 63019pp. doi:10.1088/1367-2630/aa66a5
Wutzler, Rene, Rebohle, Lars, Prucnal, Slawomir, Bregolin, Felipe L., HĂŒbner, Rene, Voelskow, Matthias, Helm, Manfred, Skorupa, Wolfgang (2015) Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing. Journal of Applied Physics, 117 (17). 175307pp. doi:10.1063/1.4919775
Löper, Philipp, Canino, Mariaconcetta, Qazzazie, Dureid, Schnabel, Manuel, Allegrezza, Marco, Summonte, Caterina, Glunz, Stefan W., Janz, Stefan, Zacharias, Margit (2013) Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination. Applied Physics Letters, 102 (3). 33507pp. doi:10.1063/1.4789441
Riise, Heine Nygard, Schumann, Thomas, Azarov, Alexander, HĂŒbner, RenĂš, Skorupa, Wolfgang, Svensson, Bengt G., Monakhov, Edouard (2015) Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials. Applied Physics Letters, 107 (2). 22105pp. doi:10.1063/1.4926661
Löper, Philipp, Canino, Mariaconcetta, Qazzazie, Dureid, Schnabel, Manuel, Allegrezza, Marco, Summonte, Caterina, Glunz, Stefan W., Janz, Stefan, Zacharias, Margit (2013) Publisher's Note: “Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination” [Appl. Phys. Lett. 102, 033507 (2013)]. Applied Physics Letters, 102 (10). 109902pp. doi:10.1063/1.4795238
Voelskow, Matthias, Yankov, Rossen, Skorupa, Wolfgang, Pezoldt, Jörg, Kups, Thomas (2008) Buried melting in germanium implanted silicon by millisecond flash lamp annealing. Applied Physics Letters, 93 (15). 151903pp. doi:10.1063/1.2993332
Rebohle, Lars, Wutzler, RenĂ©, Prucnal, Slawomir, HĂŒbner, RenĂ©, Georgiev, Yordan M., Erbe, Artur, Böttger, Roman, Glaser, Markus, Lugstein, Alois, Helm, Manfred, Skorupa, Wolfgang (2017) Local Formation of InAs Nanocrystals in Si by Masked Ion Implantation and Flash Lamp Annealing. physica status solidi c, 14 (12) 1700188 doi:10.1002/pssc.201700188
Prucnal, S., Skorupa, W., Helm, M., Zhou, Shengqiang (2014) Formation and photoluminescence of GaAs1−xNx dilute nitride achieved by N-implantation and flash lamp annealing. Applied Physics Letters, 105 (1). 12107pp. doi:10.1063/1.4890114
Schnabel, Manuel, Weiss, Charlotte, Löper, Philipp, Canino, Mariaconcetta, Summonte, Caterina, Wilshaw, Peter R., Janz, Stefan (2014) Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion. Journal of Applied Physics, 116 (2). 24315pp. doi:10.1063/1.4890030
Prucnal, S., Turek, M., Drozdziel, A., Pyszniak, K., Zhou, S. Q., Kanjilal, A., Skorupa, W., Zuk, J. (2010) Formation of InAs quantum dots in silicon by sequential ion implantation and flash lamp annealing. Applied Physics B, 101 (1). 315-319 doi:10.1007/s00340-010-4140-5
 
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