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Trapatseli, Maria, Khiat, Ali, Cortese, Simone, Serb, Alexantrou, Carta, Daniela, Prodromakis, Themistoklis (2016) Engineering the switching dynamics of TiOx-based RRAM with Al doping. Journal of Applied Physics, 120 (2). 25108pp. doi:10.1063/1.4958672

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Reference TypeJournal (article/letter/editorial)
TitleEngineering the switching dynamics of TiOx-based RRAM with Al doping
JournalJournal of Applied Physics
AuthorsTrapatseli, MariaAuthor
Khiat, AliAuthor
Cortese, SimoneAuthor
Serb, AlexantrouAuthor
Carta, DanielaAuthor
Prodromakis, ThemistoklisAuthor
Year2016 (July 14)Volume120
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.4958672Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5205672Long-form Identifiermindat:1:5:5205672:9
GUID0
Full ReferenceTrapatseli, Maria, Khiat, Ali, Cortese, Simone, Serb, Alexantrou, Carta, Daniela, Prodromakis, Themistoklis (2016) Engineering the switching dynamics of TiOx-based RRAM with Al doping. Journal of Applied Physics, 120 (2). 25108pp. doi:10.1063/1.4958672
Plain TextTrapatseli, Maria, Khiat, Ali, Cortese, Simone, Serb, Alexantrou, Carta, Daniela, Prodromakis, Themistoklis (2016) Engineering the switching dynamics of TiOx-based RRAM with Al doping. Journal of Applied Physics, 120 (2). 25108pp. doi:10.1063/1.4958672
In(2016, July) Journal of Applied Physics Vol. 120 (2) AIP Publishing

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Cortese, Simone, Trapatseli, Maria, Khiat, Ali, Prodromakis, Themistoklis (2016) On the origin of resistive switching volatility in Ni/TiO2/Ni stacks. Journal of Applied Physics, 120 (6). 65104pp. doi:10.1063/1.4960690
Trapatseli, Maria, Cortese, Simone, Serb, Alexander, Khiat, Ali, Prodromakis, Themistoklis (2017) Impact of ultra-thin Al2O3–y layers on TiO2–x ReRAM switching characteristics. Journal of Applied Physics, 121 (18). 184505pp. doi:10.1063/1.4983006
Stathopoulos, Spyros, Khiat, Ali, Trapatseli, Maria, Cortese, Simone, Serb, Alexantrou, Valov, Ilia, Prodromakis, Themis (2017) Multibit memory operation of metal-oxide bi-layer memristors. Scientific Reports, 7. doi:10.1038/s41598-017-17785-1
Cortese, Simone, Khiat, Ali, Carta, Daniela, Light, Mark E., Prodromakis, Themistoklis (2016) An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin. Applied Physics Letters, 108 (3). 33505pp. doi:10.1063/1.4940361
Carta, Daniela, Salaoru, Iulia, Khiat, Ali, Regoutz, Anna, Mitterbauer, Christoph, Harrison, Nicholas M., Prodromakis, Themistoklis (2016) Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX Approach. ACS Applied Materials & Interfaces, 8. 19605-19611 doi:10.1021/acsami.6b04919
Serb, Alexantrou, Khiat, Ali, Prodromakis, Themistoklis (2018) Seamlessly fused digital-analogue reconfigurable computing using memristors. Nature Communications, 9. doi:10.1038/s41467-018-04624-8
Gupta, Isha, Serb, Alexantrou, Khiat, Ali, Zeitler, Ralf, Vassanelli, Stefano, Prodromakis, Themistoklis (2016) Real-time encoding and compression of neuronal spikes by metal-oxide memristors. Nature Communications, 7. doi:10.1038/ncomms12805
Berdan, Radu, Vasilaki, Eleni, Khiat, Ali, Indiveri, Giacomo, Serb, Alexandru, Prodromakis, Themistoklis (2016) Emulating short-term synaptic dynamics with memristive devices. Scientific Reports, 6. doi:10.1038/srep18639
Carta, D., Hitchcock, A. P., Guttmann, P., Regoutz, A., Khiat, A., Serb, A., Gupta, I., Prodromakis, T. (2016) Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy. Scientific Reports, 6. doi:10.1038/srep21525
Trapatseli, M., Carta, D., Regoutz, A., Khiat, A., Serb, A., Gupta, I., Prodromakis, T. (2015) Conductive Atomic Force Microscopy Investigation of Switching Thresholds in Titanium Dioxide Thin Films. The Journal of Physical Chemistry C, 119 (21). 11958-11964 doi:10.1021/acs.jpcc.5b01672
Serb, Alexantrou, Corna, Andrea, George, Richard, Khiat, Ali, Rocchi, Federico, Reato, Marco, Maschietto, Marta, Mayr, Christian, Indiveri, Giacomo, Vassanelli, Stefano, Prodromakis, Themistoklis (2020) Memristive synapses connect brain and silicon spiking neurons. Scientific Reports, 10. doi:10.1038/s41598-020-58831-9
 
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