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Okojie, R. S., Lukco, D. (2016) Simultaneous ohmic contacts to p- and n-type 4H-SiC by phase segregation annealing of co-sputtered Pt-Ti. Journal of Applied Physics, 120 (21). 215301pp. doi:10.1063/1.4968572

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Reference TypeJournal (article/letter/editorial)
TitleSimultaneous ohmic contacts to p- and n-type 4H-SiC by phase segregation annealing of co-sputtered Pt-Ti
JournalJournal of Applied Physics
AuthorsOkojie, R. S.Author
Lukco, D.Author
Year2016 (December 7)Volume120
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.4968572Search in ResearchGate
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Mindat Ref. ID5205719Long-form Identifiermindat:1:5:5205719:9
GUID0
Full ReferenceOkojie, R. S., Lukco, D. (2016) Simultaneous ohmic contacts to p- and n-type 4H-SiC by phase segregation annealing of co-sputtered Pt-Ti. Journal of Applied Physics, 120 (21). 215301pp. doi:10.1063/1.4968572
Plain TextOkojie, R. S., Lukco, D. (2016) Simultaneous ohmic contacts to p- and n-type 4H-SiC by phase segregation annealing of co-sputtered Pt-Ti. Journal of Applied Physics, 120 (21). 215301pp. doi:10.1063/1.4968572
In(2016, December) Journal of Applied Physics Vol. 120 (21) AIP Publishing

See Also

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Okojie, Robert S., Lukco, Dorothy (2018) Pt:Ti Diffusion Barrier, Interconnect, and Simultaneous Ohmic Contacts to n- and p-Type 4H-SiC. Materials Science Forum, 924. 381-384 doi:10.4028/www.scientific.net/msf.924.381
Okojie, Robert S., Lukco, Dorothy, Chen, Yuanliang L., Spry, David J. (2002) Reliability assessment of Ti/TaSi[sub 2]/Pt ohmic contacts on SiC after 1000 h at 600 °C. Journal of Applied Physics, 91 (10). 6553pp. doi:10.1063/1.1470255
Tsukimoto, S., Sakai, T., Murakami, Masanori (2004) Electrical properties and microstructure of ternary Ge∕Ti∕Al ohmic contacts to p-type 4H–SiC. Journal of Applied Physics, 96 (9). 4976-4981 doi:10.1063/1.1797546
Johnson, Brian J., Capano, Michael A. (2004) Mechanism of ohmic behavior of Al/Ti contacts top-type 4H-SiC after annealing. Journal of Applied Physics, 95 (10). 5616-5620 doi:10.1063/1.1707215
Vivona, M., Greco, G., Lo Nigro, R., Bongiorno, C., Roccaforte, F. (2015) Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC. Journal of Applied Physics, 118 (3). 35705pp. doi:10.1063/1.4927271
Papanicolaou, N. A., Edwards, A., Rao, M. V., Anderson, W. T. (1998) Si/Pt Ohmic contacts to p-type 4H–SiC. Applied Physics Letters, 73 (14). 2009-2011 doi:10.1063/1.122351
Yang, Hyuck Soo, Norton, D. P., Pearton, S. J., Ren, F. (2005) Ti∕Au n-type Ohmic contacts to bulk ZnO substrates. Applied Physics Letters, 87 (21). 212106pp. doi:10.1063/1.2135381
Yu, Hailong, Zhang, Xufang, Shen, Huajun, Tang, Yidan, Bai, Yun, Wu, Yudong, Liu, Kean, Liu, Xinyu (2015) Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC. Journal of Applied Physics, 117 (2). 25703pp. doi:10.1063/1.4905832
Sakai, T., Nitta, K., Tsukimoto, S., Moriyama, M., Murakami, Masanori (2004) Ternary TiAlGe ohmic contacts for p-type 4H-SiC. Journal of Applied Physics, 95 (4). 2187-2189 doi:10.1063/1.1643772
Huang, Lingqin, Liu, Bingbing, Zhu, Qiaozhi, Chen, Suhua, Gao, Mingchao, Qin, Fuwen, Wang, Dejun (2012) Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing. Applied Physics Letters, 100 (26). 263503pp. doi:10.1063/1.4730435
Li, Yan Liang, Zhang, Yi Meng, Tang, Xiao Yan, Guo, Tao, Zhang, Yu Ming (2018) Extremely Thermal Stable Ni/W/TaSi2/Pt Simultaneous Ohmic Contacts to n-Type and p-Type 4H-SiC. Materials Science Forum, 924. 401-404 doi:10.4028/www.scientific.net/msf.924.401
 
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