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Hainey, Mel F., Innocent-Dolor, Jon-L, Choudhury, Tanushree H., Redwing, Joan M. (2017) Controlling silicon crystallization in aluminum-induced crystallization via substrate plasma treatment. Journal of Applied Physics, 121 (11). 115301pp. doi:10.1063/1.4978706

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Reference TypeJournal (article/letter/editorial)
TitleControlling silicon crystallization in aluminum-induced crystallization via substrate plasma treatment
JournalJournal of Applied Physics
AuthorsHainey, Mel F.Author
Innocent-Dolor, Jon-LAuthor
Choudhury, Tanushree H.Author
Redwing, Joan M.Author
Year2017 (March 21)Volume121
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.4978706Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5206380Long-form Identifiermindat:1:5:5206380:8
GUID0
Full ReferenceHainey, Mel F., Innocent-Dolor, Jon-L, Choudhury, Tanushree H., Redwing, Joan M. (2017) Controlling silicon crystallization in aluminum-induced crystallization via substrate plasma treatment. Journal of Applied Physics, 121 (11). 115301pp. doi:10.1063/1.4978706
Plain TextHainey, Mel F., Innocent-Dolor, Jon-L, Choudhury, Tanushree H., Redwing, Joan M. (2017) Controlling silicon crystallization in aluminum-induced crystallization via substrate plasma treatment. Journal of Applied Physics, 121 (11). 115301pp. doi:10.1063/1.4978706
In(2017, March) Journal of Applied Physics Vol. 121 (11) AIP Publishing

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