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Nærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, Bertoni, Mariana (2017) On the recombination centers of iron-gallium pairs in Ga-doped silicon. Journal of Applied Physics, 122 (8). 85703pp. doi:10.1063/1.5000358

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Reference TypeJournal (article/letter/editorial)
TitleOn the recombination centers of iron-gallium pairs in Ga-doped silicon
JournalJournal of Applied Physics
AuthorsNærland, Tine UbergAuthor
Bernardini, SimoneAuthor
Haug, HalvardAuthor
Grini, SigbjørnAuthor
Vines, LasseAuthor
Stoddard, NathanAuthor
Bertoni, MarianaAuthor
Year2017 (August 28)Volume122
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.5000358Search in ResearchGate
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Mindat Ref. ID5208435Long-form Identifiermindat:1:5:5208435:1
GUID0
Full ReferenceNærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, Bertoni, Mariana (2017) On the recombination centers of iron-gallium pairs in Ga-doped silicon. Journal of Applied Physics, 122 (8). 85703pp. doi:10.1063/1.5000358
Plain TextNærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, Bertoni, Mariana (2017) On the recombination centers of iron-gallium pairs in Ga-doped silicon. Journal of Applied Physics, 122 (8). 85703pp. doi:10.1063/1.5000358
In(2017, August) Journal of Applied Physics Vol. 122 (8) AIP Publishing

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