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Zrir, M. A., Alek, B., Hussein, A., Shaker, S. A. (2018) Investigation of in-situ co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy. Journal of Applied Physics, 123 (13). 133102pp. doi:10.1063/1.5009327

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of in-situ co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsZrir, M. A.Author
Alek, B.Author
Hussein, A.Author
Shaker, S. A.Author
Year2018 (April 7)Volume123
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.5009327Search in ResearchGate
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Mindat Ref. ID5208675Long-form Identifiermindat:1:5:5208675:7
GUID0
Full ReferenceZrir, M. A., Alek, B., Hussein, A., Shaker, S. A. (2018) Investigation of in-situ co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy. Journal of Applied Physics, 123 (13). 133102pp. doi:10.1063/1.5009327
Plain TextZrir, M. A., Alek, B., Hussein, A., Shaker, S. A. (2018) Investigation of in-situ co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy. Journal of Applied Physics, 123 (13). 133102pp. doi:10.1063/1.5009327
In(2018, April) Journal of Applied Physics Vol. 123 (13) AIP Publishing

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Zrir, M. A., Alek, B., Hussein, A., Shaker, S. A. (2019) Retraction: “Investigation of in-situ co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy” [J. Appl. Phys. 123, 133102 (2018)]. Journal of Applied Physics, 125 (12). 129901pp. doi:10.1063/1.5092970
Luong, T. K. P., Dau, M. T., Zrir, M. A., Stoffel, M., Le Thanh, V., Petit, M., Ghrib, A., El Kurdi, M., Boucaud, P., Rinnert, H., Murota, J. (2013) Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy. Journal of Applied Physics, 114 (8). 83504pp. doi:10.1063/1.4818945
Kesan, V. P., Iyer, S. S., Cotte, J. M. (1991) p‐type doping of germanium grown by molecular beam epitaxy on Ge(100) substrates. Applied Physics Letters, 59 (7). 852-854 doi:10.1063/1.105257
Zhou, T. C., Zhou, X. C., Kirk, W. P. (1997) A comparative study of Si doping in GaAs layers grown by molecular beam epitaxy on GaAs(110) and GaAs(001) surfaces. Journal of Applied Physics, 81 (11). 7372-7375 doi:10.1063/1.365437
Morales, F. M., GarcĂ­a, R., Molina, S. I., Aouni, A., Postigo, P. A., Fonstad, C. G. (2009) Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing. Applied Physics Letters, 94 (4). 41919pp. doi:10.1063/1.3077610
Wood, C. E. C., Joyce, B. A. (1978) Tin‐doping effects in GaAs films grown by molecular beam epitaxy. Journal of Applied Physics, 49 (9). 4854-4861 doi:10.1063/1.325517
Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V. (2004) Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy. Journal of Applied Physics, 96 (12). 7665-7674 doi:10.1063/1.1809772
Hida, Y., Tamagawa, T., Ueba, H., Tatsuyama, C. (1990) Strain relaxation of Ge films grown on a Si(001)‐2×1 surface by molecular beam epitaxy. Journal of Applied Physics, 67 (12). 7274-7277 doi:10.1063/1.344510
Noge, H., Kano, H., Hashimoto, M., Igarashi, I. (1988) Antiphase domains in GaAs grown on a (001)‐oriented Si substrate by molecular‐beam epitaxy. Journal of Applied Physics, 64 (4). 2246-2248 doi:10.1063/1.341698
Joblot, S., Semond, F., Cordier, Y., Lorenzini, P., Massies, J. (2005) High-electron-mobility AlGaN∕GaN heterostructures grown on Si(001) by molecular-beam epitaxy. Applied Physics Letters, 87 (13). 133505pp. doi:10.1063/1.2067698
Valvo, M., Bongiorno, C., Giannazzo, F., Terrasi, A. (2013) Localized Si enrichment in coherent self-assembled Ge islands grown by molecular beam epitaxy on (001)Si single crystal. Journal of Applied Physics, 113 (3). 33513pp. doi:10.1063/1.4775772
 
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