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Talantsev, Artem, Elzwawy, Amir, Kim, CheolGi (2018) Effect of NiFeCr seed and capping layers on exchange bias and planar Hall voltage response of NiFe/Au/IrMn trilayer structures. Journal of Applied Physics, 123 (17). 173902pp. doi:10.1063/1.5023888

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Reference TypeJournal (article/letter/editorial)
TitleEffect of NiFeCr seed and capping layers on exchange bias and planar Hall voltage response of NiFe/Au/IrMn trilayer structures
JournalJournal of Applied Physics
AuthorsTalantsev, ArtemAuthor
Elzwawy, AmirAuthor
Kim, CheolGiAuthor
Year2018 (May 7)Volume123
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.5023888Search in ResearchGate
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Mindat Ref. ID5208963Long-form Identifiermindat:1:5:5208963:9
GUID0
Full ReferenceTalantsev, Artem, Elzwawy, Amir, Kim, CheolGi (2018) Effect of NiFeCr seed and capping layers on exchange bias and planar Hall voltage response of NiFe/Au/IrMn trilayer structures. Journal of Applied Physics, 123 (17). 173902pp. doi:10.1063/1.5023888
Plain TextTalantsev, Artem, Elzwawy, Amir, Kim, CheolGi (2018) Effect of NiFeCr seed and capping layers on exchange bias and planar Hall voltage response of NiFe/Au/IrMn trilayer structures. Journal of Applied Physics, 123 (17). 173902pp. doi:10.1063/1.5023888
In(2018, May) Journal of Applied Physics Vol. 123 (17) AIP Publishing

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Elzwawy, Amir, Kim, SungJoon, Talantsev, Artem, Kim, CheolGi (2019) Equisensitive adjustment of planar Hall effect sensor’s operating field range by material and thickness variation of active layers. Journal of Physics D: Applied Physics, 52. 285001pp. doi:10.1088/1361-6463/ab18f2
Talantsev, Artem, Elzwawy, Amir, Kim, Sung Joon, Kim, CheolGi (2021) Microscopic manipulations of interatomic coupling density for tailoring of exchange bias mediated by mesoscopic interface topology. Applied Surface Science, 558. 149861pp. doi:10.1016/j.apsusc.2021.149861
Hung, Tran Quang, Oh, Sunjong, Sinha, Brajalal, Jeong, Jong-Ryul, Kim, Dong-Young, Kim, CheolGi (2010) High field-sensitivity planar Hall sensor based on NiFe/Cu/IrMn trilayer structure. Journal of Applied Physics, 107 (9). doi:10.1063/1.3337739
Talantsev, Artem, Elzwawy, Amir, Kim, Sung Joon, Kim, CheolGi (2021) Corrigendum to “Microscopic manipulations of interatomic coupling density for tailoring of exchange bias mediated by mesoscopic interface topology” [Appl. Surf. Sci. 558 (2021) 149861]. Applied Surface Science, 565. 150299pp. doi:10.1016/j.apsusc.2021.150299
Sinha, Brajalal, Quang Hung, Tran, Sri Ramulu, Torati, Oh, Sunjong, Kim, Kunwoo, Kim, Dong-Young, Terki, Ferial, Kim, CheolGi (2013) Planar Hall resistance ring sensor based on NiFe/Cu/IrMn trilayer structure. Journal of Applied Physics, 113 (6). 63903pp. doi:10.1063/1.4790139
Elzwawy, Amir, Talantsev, Artem, Kim, CheolGi (2018) Free and forced Barkhausen noises in magnetic thin film based cross-junctions. Journal of Magnetism and Magnetic Materials, 458. 292-300 doi:10.1016/j.jmmm.2018.03.042
Sinha, Brajalal, Quang Hung, Tran, Sri Ramulu, Torati, Oh, Sunjong, Kim, Kunwoo, Kim, Dong-Young, Terki, Ferial, Kim, CheolGi (2013) Erratum: “Planar Hall resistance ring sensor based on NiFe/Cu/IrMn trilayer structure” [J. Appl. Phys. 113, 063903 (2013)]. Journal of Applied Physics, 114 (8). 89902pp. doi:10.1063/1.4819893
Sankaranarayanan, V.K., Yoon, S.M., Kim, C.G., Kim, C.O. (2005) Exchange bias variations of the seed and top NiFe layers in NiFe/FeMn/NiFe trilayer as a function of seed layer thickness. Journal of Magnetism and Magnetic Materials, 286. 196-199 doi:10.1016/j.jmmm.2004.09.039
Tu, Bui Dinh, Hung, Tran Quang, Thanh, Nguyen Trung, Danh, Tran Mau, Duc, Nguyen Huu, Kim, CheolGi (2008) Planar Hall bead array counter microchip with NiFe/IrMn bilayers. Journal of Applied Physics, 104 (7). 74701pp. doi:10.1063/1.2988297
Talantsev, Artem, Bakhmetiev, Maxim, Morgunov, Roman (2022) Thermal hysteresis of magnetization in NiFe/IrMn exchange-biased ferromagnet. Journal of Physics D: Applied Physics, 55 (31) 315002 doi:10.1088/1361-6463/ac6e13
Thanh, N. T., Tu, L. T., Ha, N. D., Kim, C. O., Kim, CheolGi, Shin, K. H., Parvatheeswara Rao, B. (2007) Thickness dependence of parallel and perpendicular anisotropic resistivity in Ta/NiFe/IrMn/Ta multilayer studied by anisotropic magnetoresistance and planar Hall effect. Journal of Applied Physics, 101 (5). 53702pp. doi:10.1063/1.2435816
 
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