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Gwozdz, K., Kolkovsky, Vl., Kolkovsky, V., Weber, J. (2018) Revised identification of the G-levels in gold doped Si by Laplace deep level transient spectroscopy. Journal of Applied Physics, 124 (1). 15701pp. doi:10.1063/1.5036807

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Reference TypeJournal (article/letter/editorial)
TitleRevised identification of the G-levels in gold doped Si by Laplace deep level transient spectroscopy
JournalJournal of Applied Physics
AuthorsGwozdz, K.Author
Kolkovsky, Vl.Author
Kolkovsky, V.Author
Weber, J.Author
Year2018 (July 7)Volume124
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.5036807Search in ResearchGate
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Mindat Ref. ID5209657Long-form Identifiermindat:1:5:5209657:8
GUID0
Full ReferenceGwozdz, K., Kolkovsky, Vl., Kolkovsky, V., Weber, J. (2018) Revised identification of the G-levels in gold doped Si by Laplace deep level transient spectroscopy. Journal of Applied Physics, 124 (1). 15701pp. doi:10.1063/1.5036807
Plain TextGwozdz, K., Kolkovsky, Vl., Kolkovsky, V., Weber, J. (2018) Revised identification of the G-levels in gold doped Si by Laplace deep level transient spectroscopy. Journal of Applied Physics, 124 (1). 15701pp. doi:10.1063/1.5036807
In(2018, July) Journal of Applied Physics Vol. 124 (1) AIP Publishing

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Scheffler, L., Kolkovsky, Vl., Weber, J. (2015) Isolated Ti in Si: Deep level transient spectroscopy, minority carrier transient spectroscopy, and high-resolution Laplace deep level transient spectroscopy studies. Journal of Applied Physics, 117 (4). 45713pp. doi:10.1063/1.4906855
Gwozdz, Katarzyna, Kolkovsky, Vladimir, Weber, Joerg (2019) Separation of Individual Thermal Double‐Donor Levels by Laplace Deep‐Level Transient Spectroscopy. physica status solidi (a), 216 (17). 1900302pp. doi:10.1002/pssa.201900302
Kolkovsky, Vl., Dobaczewski, L., Nielsen, K. Bonde, Kolkovsky, V., Larsen, A. Nylandsted, Weber, J. (2009) Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopy. Physica B: Condensed Matter, 404 (23). 5080-5084 doi:10.1016/j.physb.2009.08.228
Kolkovsky, Vl., Privitera, V, Larsen, A. Nylandsted (2009) Deep-level transient spectroscopy of low-energy ion-irradiated silicon. Journal of Applied Physics, 105 (1). 14501pp. doi:10.1063/1.3054544
Gwozdz, K., Stübner, R., Kolkovsky, Vl., Weber, J. (2017) Carbon-hydrogen defects with a neighboring oxygen atom in n-type Si. Applied Physics Letters, 111 (3). 32102pp. doi:10.1063/1.4993934
Scheffler, L., Kolkovsky, Vl., Weber, J. (2014) Electrical levels in nickel doped silicon. Journal of Applied Physics, 116 (17). 173704pp. doi:10.1063/1.4901003
Kolkovsky, Vl., Stübner, R., Gwozdz, K., Weber, J. (2018) Carbon-hydrogen-related complexes in Si. Physica B: Condensed Matter, 535. 128-131 doi:10.1016/j.physb.2017.06.085
Gelczuk, Ł., Dąbrowska-Szata, M., Kolkovsky, Vl., Sochacki, M., Szmidt, J., Gotszalk, T. (2020) Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy. Journal of Applied Physics, 127 (6). 64503pp. doi:10.1063/1.5140731
Scheffler, L, Kolkovsky, Vl, Lavrov, E V, Weber, J (2011) Deep level transient spectroscopy studies of n-type ZnO single crystals grown by different techniques. Journal of Physics: Condensed Matter, 23 (33). 334208pp. doi:10.1088/0953-8984/23/33/334208
Kolkovsky, Vl., Andersen, O., Dobaczewski, L., Peaker, A. R., Nielsen, K. Bonde (2006) Electrical activity of thePtH2complex in silicon: High-resolution Laplace deep-level transient spectroscopy and uniaxial-stress technique. Physical Review B, 73 (19) doi:10.1103/physrevb.73.195209
Stübner, R., Kolkovsky, Vl., Weber, J. (2015) Two different carbon-hydrogen complexes in silicon with closely spaced energy levels. Journal of Applied Physics, 118 (5). 55704pp. doi:10.1063/1.4928146
 
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