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Mahler, Felix, Tomm, Jens W., Reimann, Klaus, Woerner, Michael, Hoffmann, Veit, Netzel, Carsten, Weyers, Markus, Elsaesser, Thomas (2019) Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability. Journal of Applied Physics, 125 (18). 185705pp. doi:10.1063/1.5078668

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Reference TypeJournal (article/letter/editorial)
TitleTime-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability
JournalJournal of Applied Physics
AuthorsMahler, FelixAuthor
Tomm, Jens W.Author
Reimann, KlausAuthor
Woerner, MichaelAuthor
Hoffmann, VeitAuthor
Netzel, CarstenAuthor
Weyers, MarkusAuthor
Elsaesser, ThomasAuthor
Year2019 (May 14)Volume125
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.5078668Search in ResearchGate
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Mindat Ref. ID5211027Long-form Identifiermindat:1:5:5211027:6
GUID0
Full ReferenceMahler, Felix, Tomm, Jens W., Reimann, Klaus, Woerner, Michael, Hoffmann, Veit, Netzel, Carsten, Weyers, Markus, Elsaesser, Thomas (2019) Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability. Journal of Applied Physics, 125 (18). 185705pp. doi:10.1063/1.5078668
Plain TextMahler, Felix, Tomm, Jens W., Reimann, Klaus, Woerner, Michael, Hoffmann, Veit, Netzel, Carsten, Weyers, Markus, Elsaesser, Thomas (2019) Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability. Journal of Applied Physics, 125 (18). 185705pp. doi:10.1063/1.5078668
In(2019, May) Journal of Applied Physics Vol. 125 (18) AIP Publishing

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Mahler, Felix, Tomm, Jens W., Reimann, Klaus, Woerner, Michael, Elsaesser, Thomas, Flytzanis, Christos, Hoffmann, Veit, Weyers, Markus (2018) Ultrafast carrier dynamics in a GaN/Al0.18Ga0.82N superlattice. Physical Review B, 97 (16) doi:10.1103/physrevb.97.161303
Netzel, Carsten, Hoffmann, Veit, Tomm, Jens W., Mahler, Felix, Einfeldt, Sven, Weyers, Markus (2020) Temperature‐Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells. physica status solidi (b), 257 (6) 2000016pp. doi:10.1002/pssb.202000016
Mahler, Felix, Reimann, Klaus, Woerner, Michael, Elsaesser, Thomas, Flytzanis, Christos, Biermann, Klaus (2019) Impact of piezoelectric fields on coherent zone-folded phonons in GaAs/AlAs superlattices. Physical Review B, 100 (12) doi:10.1103/physrevb.100.121302
Elsaesser, Thomas, Reimann, Klaus, Woerner, Michael (2015) Focus: Phase-resolved nonlinear terahertz spectroscopy—From charge dynamics in solids to molecular excitations in liquids. The Journal of Chemical Physics, 142 (21). 212301pp. doi:10.1063/1.4916522
Talalaev, Vadim, Tomm, Jens W., Elsaesser, Thomas, Zeimer, Ute, Fricke, Jörg, Knauer, Arne, Kissel, Heiko, Weyers, Markus, Tarasov, Georgiy G., Grenzer, J., Pietsch, U. (2005) Carrier dynamics in laterally strain-modulated InGaAs quantum wells. Applied Physics Letters, 87 (26). 262103pp. doi:10.1063/1.2151248
Somma, Carmine, Folpini, Giulia, Reimann, Klaus, Woerner, Michael, Elsaesser, Thomas (2016) Phase-resolved two-dimensional terahertz spectroscopy including off-resonant interactions beyond the χ(3) limit. The Journal of Chemical Physics, 144 (18). 184202pp. doi:10.1063/1.4948639
Netzel, Carsten, Hoffmann, Veit, Wernicke, Tim, Knauer, Arne, Weyers, Markus, Kneissl, Michael (2010) Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells. physica status solidi (c), 7 (7). 1872-1874 doi:10.1002/pssc.200983479
Reimann, Klaus, Woerner, Michael, Elsaesser, Thomas (2021) Two-dimensional terahertz spectroscopy of condensed-phase molecular systems. The Journal of Chemical Physics, 154 (12) 120901pp. doi:10.1063/5.0046664
Maaßdorf, A., Gramlich, S., Richter, E., Brunner, F., Weyers, M., Tränkle, G., Tomm, J. W., Mazur, Y. I., Nickel, D., Malyarchuk, V., Günther, T., Lienau, Ch., Bärwolff, A., Elsaesser, T. (2002) Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence. Journal of Applied Physics, 91 (8). 5072-5078 doi:10.1063/1.1456244
Netzel, Carsten, Stellmach, Joachim, Feneberg, Martin, Frentrup, Martin, Winkler, Michael, Mehnke, Frank, Wernicke, Tim, Goldhahn, Rüdiger, Kneissl, Michael, Weyers, Markus (2014) Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers. Applied Physics Letters, 104 (5). 51906pp. doi:10.1063/1.4863964
Hempel, Martin, Ziegler, Mathias, Tomm, Jens W., Elsaesser, Thomas, Michel, Nicolas, Krakowski, Michel (2010) Time-resolved analysis of catastrophic optical damage in 975 nm emitting diode lasers. Applied Physics Letters, 96 (25). 251105pp. doi:10.1063/1.3456388
 
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