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Johnston, C F, Kappers, M J, Barnard, J S, Humphreys, C J (2008) Characterisation of non-polar (11-20) gallium nitride using TEM techniques. Journal of Physics: Conference Series, 126. 12084pp. doi:10.1088/1742-6596/126/1/012084

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Reference TypeJournal (article/letter/editorial)
TitleCharacterisation of non-polar (11-20) gallium nitride using TEM techniques
JournalJournal of Physics: Conference Series
AuthorsJohnston, C FAuthor
Kappers, M JAuthor
Barnard, J SAuthor
Humphreys, C JAuthor
Year2008 (August 1)Volume126
PublisherIOP Publishing
DOIdoi:10.1088/1742-6596/126/1/012084Search in ResearchGate
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Mindat Ref. ID5222103Long-form Identifiermindat:1:5:5222103:1
GUID0
Full ReferenceJohnston, C F, Kappers, M J, Barnard, J S, Humphreys, C J (2008) Characterisation of non-polar (11-20) gallium nitride using TEM techniques. Journal of Physics: Conference Series, 126. 12084pp. doi:10.1088/1742-6596/126/1/012084
Plain TextJohnston, C F, Kappers, M J, Barnard, J S, Humphreys, C J (2008) Characterisation of non-polar (11-20) gallium nitride using TEM techniques. Journal of Physics: Conference Series, 126. 12084pp. doi:10.1088/1742-6596/126/1/012084
In(2008) Journal of Physics: Conference Series Vol. 126. IOP Publishing

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Johnston, C. F., Kappers, M. J., Barnard, J. S., Humphreys, C. J. (2008) Morphological study of non-polar (11-20) GaN grown on r-plane (1-102) sapphire. physica status solidi (c), 5 (6). 1786-1788 doi:10.1002/pssc.200778638
Barnard, J S, Bennett, S E, Oliver, R A, Kappers, M J, Humphreys, C J (2010) The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials. Journal of Physics: Conference Series, 209. 12019pp. doi:10.1088/1742-6596/209/1/012019
Bennett, S E, Clifton, P H, Ulfig, R M, Kappers, M J, Barnard, J S, Humphreys, C J, Oliver, R A (2010) Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS. Journal of Physics: Conference Series, 209. 12014pp. doi:10.1088/1742-6596/209/1/012014
Moram, M. A., Johnston, C. F., Hollander, J. L., Kappers, M. J., Humphreys, C. J. (2009) Understanding x-ray diffraction of nonpolar gallium nitride films. Journal of Applied Physics, 105 (11). 113501pp. doi:10.1063/1.3129307
Chee, K W A, Rodenburg, C, Humphreys, C J (2008) High resolution dopant profiling in the SEM, image widths and surface band-bending. Journal of Physics: Conference Series, 126. 12033pp. doi:10.1088/1742-6596/126/1/012033
Moram, M A, Johnston, C F, Kappers, M J, Humphreys, C J (2009) The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films. Journal of Physics D: Applied Physics, 42. 135407pp. doi:10.1088/0022-3727/42/13/135407
Liu, Lewis Z-Y, Rao, D V Sridhara, Kappers, M J, Humphreys, C J, Geiger, D (2010) Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography. Journal of Physics: Conference Series, 209. 12012pp. doi:10.1088/1742-6596/209/1/012012
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Ortiz, M I, Rodriguez, A, Sangrador, J, Kanyinda-Malu, C, Rodriguez, T, Ballesteros, C (2008) Structural stability of SiGe nanoparticles under ‘in situ’ electron beam irradiation in TEM. Journal of Physics: Conference Series, 126. 12023pp. doi:10.1088/1742-6596/126/1/012023
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