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Herbots, Nicole, Lobet, Maurice, Van de Wiele, Fernand (1985) RBS study of the effect of arsenic and phosphorus interfacial segregation upon the sintering of contacts between implanted polycrystalline silicon and aluminum: Silicon(1%). Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 278-286 doi:10.1016/0168-583x(85)90566-x

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Reference TypeJournal (article/letter/editorial)
TitleRBS study of the effect of arsenic and phosphorus interfacial segregation upon the sintering of contacts between implanted polycrystalline silicon and aluminum: Silicon(1%)
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsHerbots, NicoleAuthor
Lobet, MauriceAuthor
Van de Wiele, FernandAuthor
Year1985 (March)Volume7
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(85)90566-xSearch in ResearchGate
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Mindat Ref. ID5584022Long-form Identifiermindat:1:5:5584022:6
GUID0
Full ReferenceHerbots, Nicole, Lobet, Maurice, Van de Wiele, Fernand (1985) RBS study of the effect of arsenic and phosphorus interfacial segregation upon the sintering of contacts between implanted polycrystalline silicon and aluminum: Silicon(1%). Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 278-286 doi:10.1016/0168-583x(85)90566-x
Plain TextHerbots, Nicole, Lobet, Maurice, Van de Wiele, Fernand (1985) RBS study of the effect of arsenic and phosphorus interfacial segregation upon the sintering of contacts between implanted polycrystalline silicon and aluminum: Silicon(1%). Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 278-286 doi:10.1016/0168-583x(85)90566-x
In(1985) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 7. Elsevier BV

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B Ä…kowski, Aleksander (1985) The influence of excess vacancy generation on the diffusion of ion implanted phosphorus into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 352-356 doi:10.1016/0168-583x(85)90580-4
Räisänen, J. (1985) The effect of encapsulation on the annealing behaviour of Mg- and Al-implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 334-336 doi:10.1016/0168-583x(85)90576-2
Hasenack, C.M., De Souza, J.P., Baumvol, I.J.R. (1985) The suppression of residual defects in silicon implanted with arsenic by rapid isothermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 9 (3). 341-343 doi:10.1016/0168-583x(85)90761-x
Lappalainen, R. (1985) Diffusion of aluminum in polycrystalline vanadium. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 44-48 doi:10.1016/0168-583x(85)90527-0
Steeples, K. (1985) Sheet resistivity of silicon wafers implanted with a high current machine. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 6 (1). 412-417 doi:10.1016/0168-583x(85)90666-4
Antoncik, E. (1985) On the electrical (in)activity of group V impurities implanted in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 12 (2). 219-224 doi:10.1016/0168-583x(85)90054-0
Kisielewicz, Mikolaj (1985) The effects of arsenic implantation on the anodic oxidation of silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 9 (2). 178-183 doi:10.1016/0168-583x(85)90680-9
(1985) Conference photos. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. doi:10.1016/0168-583x(85)90519-1
Hosier, W., Darji, R. (1994) On the nonlinearity of silicon detectors and the energy calibration in RBS. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 85 (1). 602-606 doi:10.1016/0168-583x(94)95890-4
Ullrich, B. Manfred (1985) Editorial. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. doi:10.1016/0168-583x(85)90518-x
Jain, Amitabh (1985) The annealing of light ion implantation damage in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 326-328 doi:10.1016/0168-583x(85)90574-9
 
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