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Pearton, S.J., Poate, J.M., Sette, F., Gibson, J.M., Jacobson, D.C., Williams, J.S. (1987) Ion implantation in GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 369-380 doi:10.1016/s0168-583x(87)80074-5

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Reference TypeJournal (article/letter/editorial)
TitleIon implantation in GaAs
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsPearton, S.J.Author
Poate, J.M.Author
Sette, F.Author
Gibson, J.M.Author
Jacobson, D.C.Author
Williams, J.S.Author
Year1987 (January)Volume19
PublisherElsevier BV
DOIdoi:10.1016/s0168-583x(87)80074-5Search in ResearchGate
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Mindat Ref. ID5587718Long-form Identifiermindat:1:5:5587718:7
GUID0
Full ReferencePearton, S.J., Poate, J.M., Sette, F., Gibson, J.M., Jacobson, D.C., Williams, J.S. (1987) Ion implantation in GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 369-380 doi:10.1016/s0168-583x(87)80074-5
Plain TextPearton, S.J., Poate, J.M., Sette, F., Gibson, J.M., Jacobson, D.C., Williams, J.S. (1987) Ion implantation in GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 369-380 doi:10.1016/s0168-583x(87)80074-5
In(1987) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 19. Elsevier BV

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Sette, F., Pearton, S.J., Poate, J.M., Rowe, J.E. (1987) Local structure of S impurities in implanted GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 408-412 doi:10.1016/s0168-583x(87)80080-0
Poate, J.M., Jacobson, D.C., Williams, J.S., Elliman, R.G., Boerma, D.O. (1987) Diffusion of implanted impurities in amorphous Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 480-483 doi:10.1016/s0168-583x(87)80095-2
Pearton, S.J., Ren, F., Chu, S.N.G., Hobson, W.S., Abernathy, C.R., Fullowan, T.R., Lothian, J.R., Elliman, R.G., Jacobson, D.C., Poate, J.M. (1993) Applications of ion implantation in III–V device technology. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 79 (1). 648-650 doi:10.1016/0168-583x(93)95434-7
McHargue, C.J., Farlow, G.C., Lewis, M.B., Williams, J.M. (1987) Implantation of gases into sapphire. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 809-812 doi:10.1016/s0168-583x(87)80162-3
Johnson, S.T., Cozzolino, C., Williams, J.S. (1987) Ion beam mixing of Sn layers with GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 762-766 doi:10.1016/s0168-583x(87)80153-2
Wong-Leung, J., Williams, J.S., Elliman, R.G., Nygren, E., Eaglesham, D.J., Jacobson, D.C., Poate, J.M. (1995) Proximity gettering of Au to ion beam induced defects in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 96 (1). 253-256 doi:10.1016/0168-583x(94)00494-3
Jacobson, D.C., Kamgar, A., Eaglesham, D.J., Lloyd, E.J., Hillenius, S.J., Poate, J.M. (1995) High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technology. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 96 (1). 416-419 doi:10.1016/0168-583x(94)00531-1
Cullis, A.G., Polman, A., Smith, P.W., Jacobson, D.C., Poate, J.M., Whitehouse, C.R. (1992) The nature of keV and MeV ion damage in AlxGa1−xAs/GaAs and AlAs/GaAs heterostructures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62 (4). 463-468 doi:10.1016/0168-583x(92)95378-5
Gerard, P. (1987) Ion implantation in magnetic garnet. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 843-850 doi:10.1016/s0168-583x(87)80169-6
Guermazi, M., Thevenard, P., Brenier, R., Thomas, J.P., Mackowski, J.M. (1987) Ion implantation effects in TiO2 bombarded with protons and deuterons. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 912-916 doi:10.1016/s0168-583x(87)80183-0
Williams, J.M., Miner, J.R. (1997) Ion implantation of silicon nitride ball bearings. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 127. 981-986 doi:10.1016/s0168-583x(97)00043-8
 
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