Reference Type | Journal (article/letter/editorial) |
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Title | Effects of high energy boron ions implanted in MOSFETs |
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Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
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Authors | Deng, E. | Author |
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Wong, H. | Author |
Cheung, N.W. | Author |
Year | 1987 (January) | Volume | 21 |
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Issue | 1 |
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Publisher | Elsevier BV |
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DOI | doi:10.1016/0168-583x(87)90812-3Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5588048 | Long-form Identifier | mindat:1:5:5588048:2 |
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GUID | 0 |
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Full Reference | Deng, E., Wong, H., Cheung, N.W. (1987) Effects of high energy boron ions implanted in MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 134-141 doi:10.1016/0168-583x(87)90812-3 |
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Plain Text | Deng, E., Wong, H., Cheung, N.W. (1987) Effects of high energy boron ions implanted in MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 134-141 doi:10.1016/0168-583x(87)90812-3 |
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In | (1987, January) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 21 (1) Elsevier BV |
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