Reference Type | Journal (article/letter/editorial) |
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Title | Development of surface topology during ion sputtering of silicon |
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Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
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Authors | Augulis, L. | Author |
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Jasiulionis, B. | Author |
Pranevičius, L. | Author |
Year | 1987 (January) | Volume | 21 |
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Issue | 1 |
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Publisher | Elsevier BV |
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DOI | doi:10.1016/0168-583x(87)90919-0Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5588268 | Long-form Identifier | mindat:1:5:5588268:4 |
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GUID | 0 |
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Full Reference | Augulis, L., Jasiulionis, B., Pranevičius, L. (1987) Development of surface topology during ion sputtering of silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 608-609 doi:10.1016/0168-583x(87)90919-0 |
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Plain Text | Augulis, L., Jasiulionis, B., Pranevičius, L. (1987) Development of surface topology during ion sputtering of silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 608-609 doi:10.1016/0168-583x(87)90919-0 |
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In | (1987, January) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 21 (1) Elsevier BV |
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