Sigmon, T.W., Parker, M.A. (1989) Solid phase epitaxial processes in implant-amorphized semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 280-284 doi:10.1016/0168-583x(89)90186-9
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Solid phase epitaxial processes in implant-amorphized semiconductors | ||
Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
Authors | Sigmon, T.W. | Author | |
Parker, M.A. | Author | ||
Year | 1989 (February) | Volume | 37 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/0168-583x(89)90186-9Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5592008 | Long-form Identifier | mindat:1:5:5592008:1 |
GUID | 0 | ||
Full Reference | Sigmon, T.W., Parker, M.A. (1989) Solid phase epitaxial processes in implant-amorphized semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 280-284 doi:10.1016/0168-583x(89)90186-9 | ||
Plain Text | Sigmon, T.W., Parker, M.A. (1989) Solid phase epitaxial processes in implant-amorphized semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 280-284 doi:10.1016/0168-583x(89)90186-9 | ||
In | (1989) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 37. Elsevier BV |
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