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Horiuchi, M., Tamura, M., Aoki, S. (1989) Gate-edge effects on SPE regrowth from As+-implanted Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 285-289 doi:10.1016/0168-583x(89)90187-0

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Reference TypeJournal (article/letter/editorial)
TitleGate-edge effects on SPE regrowth from As+-implanted Si
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsHoriuchi, M.Author
Tamura, M.Author
Aoki, S.Author
Year1989 (February)Volume37
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(89)90187-0Search in ResearchGate
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Mindat Ref. ID5592010Long-form Identifiermindat:1:5:5592010:6
GUID0
Full ReferenceHoriuchi, M., Tamura, M., Aoki, S. (1989) Gate-edge effects on SPE regrowth from As+-implanted Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 285-289 doi:10.1016/0168-583x(89)90187-0
Plain TextHoriuchi, M., Tamura, M., Aoki, S. (1989) Gate-edge effects on SPE regrowth from As+-implanted Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 285-289 doi:10.1016/0168-583x(89)90187-0
In(1989) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 37. Elsevier BV

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Tamura, M., Horiuchi, M., Kawamoto, Y. (1989) Mask-size dependence of lattice defects generated by B- and As-implantation into submicron Si areas. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 329-335 doi:10.1016/0168-583x(89)90197-3
(1989) Committees. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. doi:10.1016/0168-583x(89)90125-0
Kuriyama, K., Aoki, S., Satoh, M., Nakano, M. (1989) Structural and electrical properties of Ge-ion-implanted Si layer. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 397-399 doi:10.1016/0168-583x(89)90812-4
Tamura, Y., Nogami, M., Tanaka, M., Maeda, T., Kumasaki, H., Tamura, S. (1989) Production implanter Nissin NH-20SR. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 620-623 doi:10.1016/0168-583x(89)90261-9
(1989) Sponsors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. doi:10.1016/0168-583x(89)90126-2
(1989) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. doi:10.1016/0168-583x(89)90122-5
(1989) Conference organization. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. doi:10.1016/0168-583x(89)90124-9
Vasile, M. (1989) Positive secondary ion emission from metal surfaces. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 40. 282-285 doi:10.1016/0168-583x(89)90979-8
Takagi, T. (1989) Editorial. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. doi:10.1016/0168-583x(89)90123-7
Itoh, A., Hioki, T., Kawamoto, J. (1989) Tribological properties of ion implanted SiC ceramics. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 692-695 doi:10.1016/0168-583x(89)90276-0
(1989) Author index. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 979-994 doi:10.1016/0168-583x(89)90338-8
 
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