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Shichang, Zou, Xianghuai, Liu (1989) Ion implantation in China. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 672-675 doi:10.1016/0168-583x(89)90272-3

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Reference TypeJournal (article/letter/editorial)
TitleIon implantation in China
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsShichang, ZouAuthor
Xianghuai, LiuAuthor
Year1989 (February)Volume37
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(89)90272-3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5592181Long-form Identifiermindat:1:5:5592181:3
GUID0
Full ReferenceShichang, Zou, Xianghuai, Liu (1989) Ion implantation in China. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 672-675 doi:10.1016/0168-583x(89)90272-3
Plain TextShichang, Zou, Xianghuai, Liu (1989) Ion implantation in China. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 672-675 doi:10.1016/0168-583x(89)90272-3
In(1989) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 37. Elsevier BV

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Genqing, Yang, Binyao, Jiang, Wei, Zhou, Xianghuai, Liu, Shichang, Zou (1989) Dynamic implantation model of ion beam enhanced deposition. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 424-428 doi:10.1016/0168-583x(89)90217-6
Jiankun, Zhou, Youshan, Chen, Xianghuai, Liu, Shichang, Zou (1989) Computer simulation of ion beam enhanced deposition of silicon nitride films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 182-184 doi:10.1016/0168-583x(89)90767-2
Xianghuai, Liu, Bin, Xue, Zhihong, Zheng, Zuyao, Zhou, Shichang, Zou (1989) Synthesis of silicon nitride films by ion beam enhanced deposition. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 185-189 doi:10.1016/0168-583x(89)90768-4
Chenglu, Lin, Ziwei, Fang, Wei, Zhou, Rushan, Ni, Shichang, Zou (1989) A study of molecular arsenic ion implantation in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 384-386 doi:10.1016/0168-583x(89)90208-5
Yuehui, Yu, Xianghuai, Liu, Shichang, Zou, Hemment, P.L.F. (1995) Optical characterization of doped top layers in SOI structures formed by ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 106 (1). 452-456 doi:10.1016/0168-583x(95)00751-2
Andersen, Hans Henrik (1989) Ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (3). 402pp. doi:10.1016/0168-583x(89)90455-2
White, Nicholas R. (1989) Ion sources for use in ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 78-86 doi:10.1016/0168-583x(89)90139-0
Mack, M.E. (1989) Charging and charge neutralization in ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 472-477 doi:10.1016/0168-583x(89)90227-9
Bøttiger, J. (1989) Ion implantation 1988. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 36 (1). 98pp. doi:10.1016/0168-583x(89)90066-9
Marwick, A.D., Clark, G.J. (1989) Ion implantation in high-Tc superconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 910-916 doi:10.1016/0168-583x(89)90326-1
Ryssel, Heiner (1989) Ion implantation in semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (1). 149pp. doi:10.1016/0168-583x(89)90023-2
 
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