Tamura, M., Suzuki, T. (1989) Damage formation and annealing of high energy ion implantation in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 318-329 doi:10.1016/0168-583x(89)90795-7
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Damage formation and annealing of high energy ion implantation in Si | ||
Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
Authors | Tamura, M. | Author | |
Suzuki, T. | Author | ||
Year | 1989 (March) | Volume | 39 |
Issue | 1 | ||
Publisher | Elsevier BV | ||
DOI | doi:10.1016/0168-583x(89)90795-7Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5592458 | Long-form Identifier | mindat:1:5:5592458:2 |
GUID | 0 | ||
Full Reference | Tamura, M., Suzuki, T. (1989) Damage formation and annealing of high energy ion implantation in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 318-329 doi:10.1016/0168-583x(89)90795-7 | ||
Plain Text | Tamura, M., Suzuki, T. (1989) Damage formation and annealing of high energy ion implantation in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 318-329 doi:10.1016/0168-583x(89)90795-7 | ||
In | (1989, March) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 39 (1) Elsevier BV |
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