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Van Schie, Eddie, Middelhoek, Jan, Zalm, Peer C. (1989) Determination of 2D implanted ion distributions using inverse radon transform methods. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (1). 109-121 doi:10.1016/0168-583x(89)90015-3

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of 2D implanted ion distributions using inverse radon transform methods
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsVan Schie, EddieAuthor
Middelhoek, JanAuthor
Zalm, Peer C.Author
Year1989 (May)Volume42
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(89)90015-3Search in ResearchGate
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Mindat Ref. ID5593391Long-form Identifiermindat:1:5:5593391:5
GUID0
Full ReferenceVan Schie, Eddie, Middelhoek, Jan, Zalm, Peer C. (1989) Determination of 2D implanted ion distributions using inverse radon transform methods. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (1). 109-121 doi:10.1016/0168-583x(89)90015-3
Plain TextVan Schie, Eddie, Middelhoek, Jan, Zalm, Peer C. (1989) Determination of 2D implanted ion distributions using inverse radon transform methods. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (1). 109-121 doi:10.1016/0168-583x(89)90015-3
In(1989, May) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 42 (1) Elsevier BV

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(1989) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (1). doi:10.1016/0168-583x(89)90001-3
Andersen, Hans Henrik (1989) Ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (3). 402pp. doi:10.1016/0168-583x(89)90455-2
Zalm, P.C., Fontijn, G.M., Janssen, K.T.F., Vriezema, C.J. (1989) Isotopical ranges: 10,11B ion implantation in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (3). 397-400 doi:10.1016/0168-583x(89)90453-9
Tsao, J.Y. (1989) Ion beam assisted film growth. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (3). 401pp. doi:10.1016/0168-583x(89)90454-0
(1989) Calendar. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (3). 405-408 doi:10.1016/0168-583x(89)90458-8
Ryssel, Heiner (1989) Ion implantation in semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (1). 149pp. doi:10.1016/0168-583x(89)90023-2
(1989) Calendar. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (1). 150-154 doi:10.1016/0168-583x(89)90024-4
Reading, John (1989) Editorial. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (4). doi:10.1016/0168-583x(89)90093-1
Kenny, M.J., Pollock, J.T.A., Wielunski, L.S. (1989) Ion-implanted graphitic carbons. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 704-707 doi:10.1016/0168-583x(89)90879-3
(1989) Subject index. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (4). 579-582 doi:10.1016/0168-583x(89)90121-3
(1989) Author index. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 42 (4). 571-577 doi:10.1016/0168-583x(89)90120-1
 
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