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Wendler, E., Wesch, W., Götz, G. (1991) Defect production in ion implanted GaAs, GaP and InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 789-793 doi:10.1016/0168-583x(91)96281-o

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Reference TypeJournal (article/letter/editorial)
TitleDefect production in ion implanted GaAs, GaP and InP
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsWendler, E.Author
Wesch, W.Author
Götz, G.Author
Year1991 (April)Volume55
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(91)96281-oSearch in ResearchGate
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Mindat Ref. ID5596532Long-form Identifiermindat:1:5:5596532:1
GUID0
Full ReferenceWendler, E., Wesch, W., Götz, G. (1991) Defect production in ion implanted GaAs, GaP and InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 789-793 doi:10.1016/0168-583x(91)96281-o
Plain TextWendler, E., Wesch, W., Götz, G. (1991) Defect production in ion implanted GaAs, GaP and InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 789-793 doi:10.1016/0168-583x(91)96281-o
In(1991, April) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 55 (1) Elsevier BV

See Also

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Wendler, E., Wesch, W., Götz, G. (1990) Influence of the dose rate on the damage production in ion implanted GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 52 (1). 57-62 doi:10.1016/0168-583x(90)90601-p
Wendler, E., Wesch, W., Götz, G. (1992) Investigation of the amorphization process in ion implanted AIIIBV compounds. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 63 (1). 47-51 doi:10.1016/0168-583x(92)95166-o
Wesch, W., Wendler, E., Gärtner, K. (1992) Nucleation of point defects in low-fluence ion-implanted GaAs and GaP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 63 (1). 52-55 doi:10.1016/0168-583x(92)95167-p
Wendler, E., Wesch, W. (1993) Defect nucleation in weakly damaged ion implanted GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 73 (4). 489-495 doi:10.1016/0168-583x(93)95830-x
Müller, P., Wesch, W., Solovyev, V.S., Gaiduk, P.I., Wendler, E., Komarov, F.F., Götz, G. (1993) Low temperature recrystallization of ion implanted InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80. 721-725 doi:10.1016/0168-583x(93)96217-z
Wesch, W., Wendler, E., Götz, G. (1987) Application of optical transmission spectroscopy to the investigation of defects in ion implanted GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 22 (4). 532-535 doi:10.1016/0168-583x(87)90156-x
Wendler, E., Müller, P., Bachmann, T., Wesch, W. (1993) Defect production, annealing and electrical activation in Si+ implanted InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80. 711-715 doi:10.1016/0168-583x(93)96215-x
Wesch, W., Gärtner, K., Wendler, E., Götz, G. (1986) RBS and optical investigations of defects in weakly damaged GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 15 (1). 431-434 doi:10.1016/0168-583x(86)90338-1
Bachmann, T., Schippel, S., Wendler, E., Wesch, W., Richter, U., Witthuhn, W. (1994) Comparison of MeV-implanted GaAs and InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 89 (1). 168-173 doi:10.1016/0168-583x(94)95166-7
Wesch, W., Wendler, E. (1993) High energy ion implantation in GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80. 716-720 doi:10.1016/0168-583x(93)96216-y
Wesch, W., Jordanov, A., Gärtner, K., Götz, G. (1989) Investigation of defects in weakly damaged ion implanted GaAs layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 445-448 doi:10.1016/0168-583x(89)90822-7
 
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