Xiong, Fulin, Ganz, Eric, Golovchenko, Jene A., Spaepen, Frans (1991) In situ RBS and channeling study of molecular beam epitaxial growth of metals and semiconductors on semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 56. 780-784 doi:10.1016/0168-583x(91)95026-a
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | In situ RBS and channeling study of molecular beam epitaxial growth of metals and semiconductors on semiconductors | ||
Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
Authors | Xiong, Fulin | Author | |
Ganz, Eric | Author | ||
Golovchenko, Jene A. | Author | ||
Spaepen, Frans | Author | ||
Year | 1991 (May) | Volume | 56 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/0168-583x(91)95026-aSearch in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5596636 | Long-form Identifier | mindat:1:5:5596636:6 |
GUID | 0 | ||
Full Reference | Xiong, Fulin, Ganz, Eric, Golovchenko, Jene A., Spaepen, Frans (1991) In situ RBS and channeling study of molecular beam epitaxial growth of metals and semiconductors on semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 56. 780-784 doi:10.1016/0168-583x(91)95026-a | ||
Plain Text | Xiong, Fulin, Ganz, Eric, Golovchenko, Jene A., Spaepen, Frans (1991) In situ RBS and channeling study of molecular beam epitaxial growth of metals and semiconductors on semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 56. 780-784 doi:10.1016/0168-583x(91)95026-a | ||
In | (1991) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 56. Elsevier BV |
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