Hirayama, H., Takaoka, G.H., Usui, H., Yamada, I. (1991) Low temperature homo- and hetero-epitaxy of sapphire films by reactive ionized cluster beam deposition. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 207-210 doi:10.1016/0168-583x(91)95206-s
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Low temperature homo- and hetero-epitaxy of sapphire films by reactive ionized cluster beam deposition | ||
Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
Authors | Hirayama, H. | Author | |
Takaoka, G.H. | Author | ||
Usui, H. | Author | ||
Yamada, I. | Author | ||
Year | 1991 (July) | Volume | 59 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/0168-583x(91)95206-sSearch in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5597553 | Long-form Identifier | mindat:1:5:5597553:1 |
GUID | 0 | ||
Full Reference | Hirayama, H., Takaoka, G.H., Usui, H., Yamada, I. (1991) Low temperature homo- and hetero-epitaxy of sapphire films by reactive ionized cluster beam deposition. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 207-210 doi:10.1016/0168-583x(91)95206-s | ||
Plain Text | Hirayama, H., Takaoka, G.H., Usui, H., Yamada, I. (1991) Low temperature homo- and hetero-epitaxy of sapphire films by reactive ionized cluster beam deposition. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 207-210 doi:10.1016/0168-583x(91)95206-s | ||
In | (1991) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 59. Elsevier BV |
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