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Usman, M., Nazir, A., Aggerstam, T., Linnarsson, M.K., Hallén, A. (2009) Electrical and structural characterization of ion implanted GaN. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 267 (8). 1561-1563 doi:10.1016/j.nimb.2009.01.091

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Reference TypeJournal (article/letter/editorial)
TitleElectrical and structural characterization of ion implanted GaN
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsUsman, M.Author
Nazir, A.Author
Aggerstam, T.Author
Linnarsson, M.K.Author
Hallén, A.Author
Year2009 (May)Volume267
Issue8
PublisherElsevier BV
DOIdoi:10.1016/j.nimb.2009.01.091Search in ResearchGate
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Mindat Ref. ID5642210Long-form Identifiermindat:1:5:5642210:6
GUID0
Full ReferenceUsman, M., Nazir, A., Aggerstam, T., Linnarsson, M.K., Hallén, A. (2009) Electrical and structural characterization of ion implanted GaN. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 267 (8). 1561-1563 doi:10.1016/j.nimb.2009.01.091
Plain TextUsman, M., Nazir, A., Aggerstam, T., Linnarsson, M.K., Hallén, A. (2009) Electrical and structural characterization of ion implanted GaN. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 267 (8). 1561-1563 doi:10.1016/j.nimb.2009.01.091
In(2009, May) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 267 (8) Elsevier BV

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Usman, M., Nour, M., Azarov, A.Yu., Hallén, A. (2010) Annealing of ion implanted 4H–SiC in the temperature range of 100–800°C analysed by ion beam techniques. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 268 (11). 2083-2085 doi:10.1016/j.nimb.2010.02.020
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