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Sushko, Gennady B., Korol, Andrei V., Solov’yov, Andrey V. (2015) Multi-GeV electron and positron channeling in bent silicon crystals. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 355. 39-43 doi:10.1016/j.nimb.2015.03.029

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Reference TypeJournal (article/letter/editorial)
TitleMulti-GeV electron and positron channeling in bent silicon crystals
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsSushko, Gennady B.Author
Korol, Andrei V.Author
Solov’yov, Andrey V.Author
Year2015 (July)Volume355
PublisherElsevier BV
DOIdoi:10.1016/j.nimb.2015.03.029Search in ResearchGate
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Mindat Ref. ID5651350Long-form Identifiermindat:1:5:5651350:5
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Full ReferenceSushko, Gennady B., Korol, Andrei V., Solov’yov, Andrey V. (2015) Multi-GeV electron and positron channeling in bent silicon crystals. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 355. 39-43 doi:10.1016/j.nimb.2015.03.029
Plain TextSushko, Gennady B., Korol, Andrei V., Solov’yov, Andrey V. (2015) Multi-GeV electron and positron channeling in bent silicon crystals. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 355. 39-43 doi:10.1016/j.nimb.2015.03.029
In(2015) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 355. Elsevier BV

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Sushko, Gennady B., Korol, Andrei V., Solov’yov, Andrey V. (2023) Atomistic modeling of the channeling process with radiation reaction force included. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 535. 117-125 doi:10.1016/j.nimb.2022.12.008
Shen, H., Zhao, Q., Zhang, F.S., Sushko, Gennady B., Korol, Andrei V., Solov’yov, Andrey V. (2018) Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 424. 26-36 doi:10.1016/j.nimb.2018.03.025
Korol, Andrei V., Bezchastnov, Victor G., Sushko, Gennady B., Solov’yov, Andrey V. (2016) Simulation of channeling and radiation of 855 MeV electrons and positrons in a small-amplitude short-period bent crystal. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 387. 41-53 doi:10.1016/j.nimb.2016.09.021
Korol, Andrei V., Solov’yov, Andrey V. (2023) Atomistic modeling and characterizaion of light sources based on small-amplitude short-period periodically bent crystals. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 537. 1-13 doi:10.1016/j.nimb.2023.01.012
Backe, H., Lauth, W. (2015) Channeling experiments with sub-GeV electrons in flat silicon single crystals. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 355. 24-29 doi:10.1016/j.nimb.2015.03.077
Rojas-Lorenzo, Germán, Rubayo-Soneira, Jesús, Márquez-Mijares, Maykel, Korol, Andrei V., Solov’yov, Andrey V. (2024) Multiple scattering of 855 MeV electrons in amorphous and crystalline silicon: Simulations versus experiment. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 556. doi:10.1016/j.nimb.2024.165515
Polozkov, Roman G., Ivanov, Vadim K., Sushko, Gennady B., Korol, Andrei V., Solov’yov, Andrey V. (2014) Radiation emission by electrons channeling in bent silicon crystals. The European Physical Journal D, 68. doi:10.1140/epjd/e2014-50229-9
Kostyuk, A., Korol, A.V., Solov’yov, A.V., Greiner, Walter (2011) Demodulation of a positron beam in a bent crystal channel. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 269 (13). 1482-1492 doi:10.1016/j.nimb.2011.04.006
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Sushko, G B, Korol, A V, Greiner, Walter, Solov'yov, A V (2013) Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals. Journal of Physics: Conference Series, 438. 12018pp. doi:10.1088/1742-6596/438/1/012018
 
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