Faye, D. Nd., Fialho, M., Magalhães, S., Alves, E., Ben Sedrine, N., Rodrigues, J., Correia, M.R., Monteiro, T., Boćkowski, M., Hoffmann, V., Weyers, M., Lorenz, K. (2016) Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379. 251-254 doi:10.1016/j.nimb.2016.03.028
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices | ||
Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
Authors | Faye, D. Nd. | Author | |
Fialho, M. | Author | ||
Magalhães, S. | Author | ||
Alves, E. | Author | ||
Ben Sedrine, N. | Author | ||
Rodrigues, J. | Author | ||
Correia, M.R. | Author | ||
Monteiro, T. | Author | ||
Boćkowski, M. | Author | ||
Hoffmann, V. | Author | ||
Weyers, M. | Author | ||
Lorenz, K. | Author | ||
Year | 2016 (July) | Volume | 379 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/j.nimb.2016.03.028Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5653351 | Long-form Identifier | mindat:1:5:5653351:8 |
GUID | 0 | ||
Full Reference | Faye, D. Nd., Fialho, M., Magalhães, S., Alves, E., Ben Sedrine, N., Rodrigues, J., Correia, M.R., Monteiro, T., Boćkowski, M., Hoffmann, V., Weyers, M., Lorenz, K. (2016) Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379. 251-254 doi:10.1016/j.nimb.2016.03.028 | ||
Plain Text | Faye, D. Nd., Fialho, M., Magalhães, S., Alves, E., Ben Sedrine, N., Rodrigues, J., Correia, M.R., Monteiro, T., Boćkowski, M., Hoffmann, V., Weyers, M., Lorenz, K. (2016) Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379. 251-254 doi:10.1016/j.nimb.2016.03.028 | ||
In | (2016) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 379. Elsevier BV |
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