Tardío, M., Egaña, A., Ramírez, R., Muñoz-Santiuste, J.E., Alves, E. (2016) Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al2O3 single crystal implanted with Mg ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379. 91-94 doi:10.1016/j.nimb.2016.04.012
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al2O3 single crystal implanted with Mg ions | ||
Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
Authors | Tardío, M. | Author | |
Egaña, A. | Author | ||
Ramírez, R. | Author | ||
Muñoz-Santiuste, J.E. | Author | ||
Alves, E. | Author | ||
Year | 2016 (July) | Volume | 379 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/j.nimb.2016.04.012Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5653384 | Long-form Identifier | mindat:1:5:5653384:6 |
GUID | 0 | ||
Full Reference | Tardío, M., Egaña, A., Ramírez, R., Muñoz-Santiuste, J.E., Alves, E. (2016) Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al2O3 single crystal implanted with Mg ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379. 91-94 doi:10.1016/j.nimb.2016.04.012 | ||
Plain Text | Tardío, M., Egaña, A., Ramírez, R., Muñoz-Santiuste, J.E., Alves, E. (2016) Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al2O3 single crystal implanted with Mg ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379. 91-94 doi:10.1016/j.nimb.2016.04.012 | ||
In | (2016) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 379. Elsevier BV |
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