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Anjum, Arshiya, Vinayakprasanna, N.H., Pradeep, T.M., Pushpa, N., Krishna, J.B.M., Gnana Prakash, A.P. (2016) A comparison of 4 MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379. 265-271 doi:10.1016/j.nimb.2016.04.023

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Reference TypeJournal (article/letter/editorial)
TitleA comparison of 4 MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsAnjum, ArshiyaAuthor
Vinayakprasanna, N.H.Author
Pradeep, T.M.Author
Pushpa, N.Author
Krishna, J.B.M.Author
Gnana Prakash, A.P.Author
Year2016 (July)Volume379
PublisherElsevier BV
DOIdoi:10.1016/j.nimb.2016.04.023Search in ResearchGate
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Mindat Ref. ID5653402Long-form Identifiermindat:1:5:5653402:1
GUID0
Full ReferenceAnjum, Arshiya, Vinayakprasanna, N.H., Pradeep, T.M., Pushpa, N., Krishna, J.B.M., Gnana Prakash, A.P. (2016) A comparison of 4 MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379. 265-271 doi:10.1016/j.nimb.2016.04.023
Plain TextAnjum, Arshiya, Vinayakprasanna, N.H., Pradeep, T.M., Pushpa, N., Krishna, J.B.M., Gnana Prakash, A.P. (2016) A comparison of 4 MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379. 265-271 doi:10.1016/j.nimb.2016.04.023
In(2016) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 379. Elsevier BV

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