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Krupka, Jerzy, Karcz, Waldemar, Kamiński, Paweł, Jensen, Leif (2016) Electrical properties of as-grown and proton-irradiated high purity silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 380. 76-83 doi:10.1016/j.nimb.2016.05.007

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Reference TypeJournal (article/letter/editorial)
TitleElectrical properties of as-grown and proton-irradiated high purity silicon
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsKrupka, JerzyAuthor
Karcz, WaldemarAuthor
Kamiński, PawełAuthor
Jensen, LeifAuthor
Year2016 (August)Volume380
PublisherElsevier BV
DOIdoi:10.1016/j.nimb.2016.05.007Search in ResearchGate
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Mindat Ref. ID5653447Long-form Identifiermindat:1:5:5653447:4
GUID0
Full ReferenceKrupka, Jerzy, Karcz, Waldemar, Kamiński, Paweł, Jensen, Leif (2016) Electrical properties of as-grown and proton-irradiated high purity silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 380. 76-83 doi:10.1016/j.nimb.2016.05.007
Plain TextKrupka, Jerzy, Karcz, Waldemar, Kamiński, Paweł, Jensen, Leif (2016) Electrical properties of as-grown and proton-irradiated high purity silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 380. 76-83 doi:10.1016/j.nimb.2016.05.007
In(2016) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 380. Elsevier BV

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