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Zhang, Jing, Song, Hong-Lian, Qiao, Mei, Wang, Tie-Jun, Yu, Xiao-Fei, Wang, Xue-Lin (2017) The Raman effects in γ-LiAlO2 induced by low-energy Ga ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 409. 72-75 doi:10.1016/j.nimb.2017.05.013

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Reference TypeJournal (article/letter/editorial)
TitleThe Raman effects in γ-LiAlO2 induced by low-energy Ga ion implantation
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsZhang, JingAuthor
Song, Hong-LianAuthor
Qiao, MeiAuthor
Wang, Tie-JunAuthor
Yu, Xiao-FeiAuthor
Wang, Xue-LinAuthor
Year2017 (October)Volume409
PublisherElsevier BV
DOIdoi:10.1016/j.nimb.2017.05.013Search in ResearchGate
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Mindat Ref. ID5655155Long-form Identifiermindat:1:5:5655155:0
GUID0
Full ReferenceZhang, Jing, Song, Hong-Lian, Qiao, Mei, Wang, Tie-Jun, Yu, Xiao-Fei, Wang, Xue-Lin (2017) The Raman effects in γ-LiAlO2 induced by low-energy Ga ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 409. 72-75 doi:10.1016/j.nimb.2017.05.013
Plain TextZhang, Jing, Song, Hong-Lian, Qiao, Mei, Wang, Tie-Jun, Yu, Xiao-Fei, Wang, Xue-Lin (2017) The Raman effects in γ-LiAlO2 induced by low-energy Ga ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 409. 72-75 doi:10.1016/j.nimb.2017.05.013
In(2017) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 409. Elsevier BV

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