Ai, W.S., Zhang, L.M., Jiang, W., Peng, J.X., Chen, L., Wang, T.S. (2018) Raman study of In x Ga 1− x N ( x = 0.32–0.9) films irradiated with Xe ions at room temperature and 773 K. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 415. 48-53 doi:10.1016/j.nimb.2017.11.003
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Raman study of In x Ga 1− x N ( x = 0.32–0.9) films irradiated with Xe ions at room temperature and 773 K | ||
| Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
| Authors | Ai, W.S. | Author | |
| Zhang, L.M. | Author | ||
| Jiang, W. | Author | ||
| Peng, J.X. | Author | ||
| Chen, L. | Author | ||
| Wang, T.S. | Author | ||
| Year | 2018 (January) | Volume | 415 |
| Publisher | Elsevier BV | ||
| DOI | doi:10.1016/j.nimb.2017.11.003Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5655495 | Long-form Identifier | mindat:1:5:5655495:5 |
| GUID | 0 | ||
| Full Reference | Ai, W.S., Zhang, L.M., Jiang, W., Peng, J.X., Chen, L., Wang, T.S. (2018) Raman study of In x Ga 1− x N ( x = 0.32–0.9) films irradiated with Xe ions at room temperature and 773 K. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 415. 48-53 doi:10.1016/j.nimb.2017.11.003 | ||
| Plain Text | Ai, W.S., Zhang, L.M., Jiang, W., Peng, J.X., Chen, L., Wang, T.S. (2018) Raman study of In x Ga 1− x N ( x = 0.32–0.9) films irradiated with Xe ions at room temperature and 773 K. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 415. 48-53 doi:10.1016/j.nimb.2017.11.003 | ||
| In | (2018) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 415. Elsevier BV | ||
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