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Liu, Fang, Prucnal, S., Yuan, Ye, Heller, R., Berencén, Y., Böttger, R., Rebohle, L., Skorupa, W., Helm, M., Zhou, S. (2018) Structural and electrical properties of Se-hyperdoped Si via ion implantation and flash lamp annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 424. 52-55 doi:10.1016/j.nimb.2018.03.033

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Reference TypeJournal (article/letter/editorial)
TitleStructural and electrical properties of Se-hyperdoped Si via ion implantation and flash lamp annealing
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsLiu, FangAuthor
Prucnal, S.Author
Yuan, YeAuthor
Heller, R.Author
Berencén, Y.Author
Böttger, R.Author
Rebohle, L.Author
Skorupa, W.Author
Helm, M.Author
Zhou, S.Author
Year2018 (June)Volume424
PublisherElsevier BV
DOIdoi:10.1016/j.nimb.2018.03.033Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5655792Long-form Identifiermindat:1:5:5655792:5
GUID0
Full ReferenceLiu, Fang, Prucnal, S., Yuan, Ye, Heller, R., Berencén, Y., Böttger, R., Rebohle, L., Skorupa, W., Helm, M., Zhou, S. (2018) Structural and electrical properties of Se-hyperdoped Si via ion implantation and flash lamp annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 424. 52-55 doi:10.1016/j.nimb.2018.03.033
Plain TextLiu, Fang, Prucnal, S., Yuan, Ye, Heller, R., Berencén, Y., Böttger, R., Rebohle, L., Skorupa, W., Helm, M., Zhou, S. (2018) Structural and electrical properties of Se-hyperdoped Si via ion implantation and flash lamp annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 424. 52-55 doi:10.1016/j.nimb.2018.03.033
In(2018) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 424. Elsevier BV

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