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Smith, B L, Rhoderick, E H (1969) Possible sources of error in the deduction of semiconductor impurity concentrations from Schottky-barrier (C, V) characteristics. Journal of Physics D: Applied Physics, 2. 465-467 doi:10.1088/0022-3727/2/3/423

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Reference TypeJournal (article/letter/editorial)
TitlePossible sources of error in the deduction of semiconductor impurity concentrations from Schottky-barrier (C, V) characteristics
JournalJournal of Physics D: Applied Physics
AuthorsSmith, B LAuthor
Rhoderick, E HAuthor
Year1969 (March 1)Volume2
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/2/3/423Search in ResearchGate
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Mindat Ref. ID5656687Long-form Identifiermindat:1:5:5656687:1
GUID0
Full ReferenceSmith, B L, Rhoderick, E H (1969) Possible sources of error in the deduction of semiconductor impurity concentrations from Schottky-barrier (C, V) characteristics. Journal of Physics D: Applied Physics, 2. 465-467 doi:10.1088/0022-3727/2/3/423
Plain TextSmith, B L, Rhoderick, E H (1969) Possible sources of error in the deduction of semiconductor impurity concentrations from Schottky-barrier (C, V) characteristics. Journal of Physics D: Applied Physics, 2. 465-467 doi:10.1088/0022-3727/2/3/423
In(1969) Journal of Physics D: Applied Physics Vol. 2. IOP Publishing

See Also

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Rhoderick, E H (1970) The physics of Schottky barriers. Journal of Physics D: Applied Physics, 3. 1153-1167 doi:10.1088/0022-3727/3/8/203
Smith, B L (1970) The majority carrier profile in thin epitaxial layers of GaAs from Schottky barrier (C.V.) characteristics. Journal of Physics D: Applied Physics, 3. 1179-1182 doi:10.1088/0022-3727/3/8/305
Coe, D J, Rhoderick, E H (1976) Silicide formation in Ni-Si Schottky barrier diodes. Journal of Physics D: Applied Physics, 9. 965-972 doi:10.1088/0022-3727/9/6/009
Rhoderick, E H (1972) Comments on the conduction mechanism in Schottky diodes. Journal of Physics D: Applied Physics, 5. 1920-1929 doi:10.1088/0022-3727/5/10/324
Tuck, B, Eftekhari, G, Cogan, D M de (1982) The Al-(n-InP) Schottky barrier. Journal of Physics D: Applied Physics, 15. 457-465 doi:10.1088/0022-3727/15/3/011
Card, H C, Rhoderick, E H (1971) Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. Journal of Physics D: Applied Physics, 4. 1589-1601 doi:10.1088/0022-3727/4/10/319
Singh, V B, Mohan, H (1970) Electroluminescence in ZnO-CdS semiconducting alloy systems. Journal of Physics D: Applied Physics, 3. 240-242 doi:10.1088/0022-3727/3/2/423
Safar, M H (1969) Acoustic detection of mechanically induced cavitation. Journal of Physics D: Applied Physics, 2. 140-142 doi:10.1088/0022-3727/2/1/423
Smith, B L, Carter, M A (1975) A constant-temperature method for evaluating deep-level parameters in Schottky-barrier TSC measurements. Journal of Physics D: Applied Physics, 8. 254-261 doi:10.1088/0022-3727/8/3/009
Vandenbroucke, D A, Meirhaeghe, R L van, Laflere, W H, Cardon, F (1985) Characteristics of the RuO2-n-GaAs Schottky barrier. Journal of Physics D: Applied Physics, 18. 731-738 doi:10.1088/0022-3727/18/4/017
Chattopadhyay, P (1996) The effect of shunt resistance on the electrical characteristics of Schottky barrier diodes. Journal of Physics D: Applied Physics, 29. 823-829 doi:10.1088/0022-3727/29/3/047
 
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