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Ingle, S G, Mishra, M B (1977) Volume nucleation of domains by impurities in thick crystals of KNbO3. Journal of Physics D: Applied Physics, 10. doi:10.1088/0022-3727/10/11/002

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Reference TypeJournal (article/letter/editorial)
TitleVolume nucleation of domains by impurities in thick crystals of KNbO3
JournalJournal of Physics D: Applied Physics
AuthorsIngle, S GAuthor
Mishra, M BAuthor
Year1977 (August 1)Volume10
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/10/11/002Search in ResearchGate
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Mindat Ref. ID5659901Long-form Identifiermindat:1:5:5659901:9
GUID0
Full ReferenceIngle, S G, Mishra, M B (1977) Volume nucleation of domains by impurities in thick crystals of KNbO3. Journal of Physics D: Applied Physics, 10. doi:10.1088/0022-3727/10/11/002
Plain TextIngle, S G, Mishra, M B (1977) Volume nucleation of domains by impurities in thick crystals of KNbO3. Journal of Physics D: Applied Physics, 10. doi:10.1088/0022-3727/10/11/002
In(1977) Journal of Physics D: Applied Physics Vol. 10. IOP Publishing

See Also

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Kulkarni, R H, Chaudhari, R M, Ingle, S G (1973) Ferroelectric domains inside thick crystals of KNbO3. Journal of Physics D: Applied Physics, 6. 1816-1821 doi:10.1088/0022-3727/6/15/308
Mishra, M. B., Ingle, S. G. (1974) Domainā€impurities interaction in KNbO3 single crystals. Journal of Applied Physics, 45 (12). 5152-5155 doi:10.1063/1.1663208
Deshmukh, K G, Ingle, S G (1971) Domain structures in KNbO3 single crystals associated with step ladders on pseudocubic (001) planes. Journal of Physics D: Applied Physics, 4. 1633-1636 doi:10.1088/0022-3727/4/10/425
Ingle, S G, Joshi, S C (1984) A dislocation model for nucleation of domain walls in KNbO3single crystals. Journal of Physics D: Applied Physics, 17. 2065-2067 doi:10.1088/0022-3727/17/10/017
Kulkarni, R H, Ingle, S G (1973) Nucleation of ferroelectric domains under the influence of very low electric fields. Journal of Physics D: Applied Physics, 6. doi:10.1088/0022-3727/6/11/102
Chandra, B P (1977) Kinetics of triboluminescence in crystals. Journal of Physics D: Applied Physics, 10. 1531-1538 doi:10.1088/0022-3727/10/11/017
Kulkarni, R H, Ingle, S G (1972) The dielectric constant of KNbO3 single crystals under biasing conditions. Journal of Physics D: Applied Physics, 5. 1474-1477 doi:10.1088/0022-3727/5/8/317
Norris, B, Smith, A L S (1977) Attachment loss of photo-ionization electrons in TEA CO2lasers. Journal of Physics D: Applied Physics, 10. doi:10.1088/0022-3727/10/17/002
Tatlock, G J (1977) Electron diffraction in MoSe2and other layer structures containing hohlstellen. Journal of Physics D: Applied Physics, 10. doi:10.1088/0022-3727/10/14/002
Bhandari, C M, Rowe, D M (1977) Thermal conductivity of highly disordered semiconductor alloys. Journal of Physics D: Applied Physics, 10. doi:10.1088/0022-3727/10/5/002
Carey, R, Newman, D M, Thomas, B W J (1977) Thickness dependence of the transverse Kerr effect in thin ferromagnetic films. Journal of Physics D: Applied Physics, 10. doi:10.1088/0022-3727/10/10/002
 
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