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Badawi, M H, Anand, K V (1977) A study of silicon oxides prepared by oxygen implantation into silicon. Journal of Physics D: Applied Physics, 10. 1931-1942 doi:10.1088/0022-3727/10/14/009

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Reference TypeJournal (article/letter/editorial)
TitleA study of silicon oxides prepared by oxygen implantation into silicon
JournalJournal of Physics D: Applied Physics
AuthorsBadawi, M HAuthor
Anand, K VAuthor
Year1977 (October 1)Volume10
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/10/14/009Search in ResearchGate
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Mindat Ref. ID5659966Long-form Identifiermindat:1:5:5659966:6
GUID0
Full ReferenceBadawi, M H, Anand, K V (1977) A study of silicon oxides prepared by oxygen implantation into silicon. Journal of Physics D: Applied Physics, 10. 1931-1942 doi:10.1088/0022-3727/10/14/009
Plain TextBadawi, M H, Anand, K V (1977) A study of silicon oxides prepared by oxygen implantation into silicon. Journal of Physics D: Applied Physics, 10. 1931-1942 doi:10.1088/0022-3727/10/14/009
In(1977) Journal of Physics D: Applied Physics Vol. 10. IOP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Nicholas, K H (1977) Implantation damage in silicon devices. Journal of Physics D: Applied Physics, 10. 393-407 doi:10.1088/0022-3727/10/4/008
Badrick, A S T, Eldeghaidy, F, Puttick, K E, Shahid, M A (1977) Scratches on near (111) silicon slices. Journal of Physics D: Applied Physics, 10. 1195 doi:10.1088/0022-3727/10/8/519
Parker, E H C, Kubiak, R A, King, R M, Grange, J D (1981) An investigation into silicon doping of MBE (100) GaAs. Journal of Physics D: Applied Physics, 14. 1853-1865 doi:10.1088/0022-3727/14/10/018
Roberts, R B (1981) Thermal expansion reference data: silicon 300-850 K. Journal of Physics D: Applied Physics, 14. doi:10.1088/0022-3727/14/10/003
Badrick, A S T, Eldeghaidy, F, Puttick, K E, Shahid, M A (1977) Scratches on near (111) silicon slices. Journal of Physics D: Applied Physics, 10. 195-200 doi:10.1088/0022-3727/10/2/004
Garulli, A, Servidori, M, Vecchi, I (1980) In-depth oxygen contamination produced in silicon by pulsed laser irradiation. Journal of Physics D: Applied Physics, 13. doi:10.1088/0022-3727/13/10/006
Anand, K V, McKell, H D, Northrop, D C (1971) The properties of silicon dioxide films on silicon as diffusion masks for boron. Journal of Physics D: Applied Physics, 4. 1722-1730 doi:10.1088/0022-3727/4/11/316
Norman, D, Skinner, D K (1977) Electron-beam effects during oxygen adsorption. Journal of Physics D: Applied Physics, 10. doi:10.1088/0022-3727/10/11/003
Willoughby, A F W (1977) Interactions between sequential dopant diffusions in silicon-a review. Journal of Physics D: Applied Physics, 10. 455-480 doi:10.1088/0022-3727/10/4/011
Puttick, K E, Hosseini, M M (1980) Fracture by a pointed indenter on near (111) silicon. Journal of Physics D: Applied Physics, 13. 1933 doi:10.1088/0022-3727/13/10/522
Bunce, R W, Rowe, D M (1977) The vacuum hot-pressing of germanium and silicon-germanium alloys. Journal of Physics D: Applied Physics, 10. 941-947 doi:10.1088/0022-3727/10/6/018
 
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