| Reference Type | Journal (article/letter/editorial) |
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| Title | Variation of carrier concentration in Pb0.8Sn0.2Te with annealing and growth temperature |
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| Journal | Journal of Physics D: Applied Physics |
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| Authors | Pickering, C | Author |
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| Harding, W R | Author |
| Geeves, N G | Author |
| Young, M L | Author |
| Year | 1977 (April 21) | Volume | 10 |
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| Publisher | IOP Publishing |
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| DOI | doi:10.1088/0022-3727/10/6/001Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 5660118 | Long-form Identifier | mindat:1:5:5660118:3 |
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|
| GUID | 0 |
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| Full Reference | Pickering, C, Harding, W R, Geeves, N G, Young, M L (1977) Variation of carrier concentration in Pb0.8Sn0.2Te with annealing and growth temperature. Journal of Physics D: Applied Physics, 10. doi:10.1088/0022-3727/10/6/001 |
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| Plain Text | Pickering, C, Harding, W R, Geeves, N G, Young, M L (1977) Variation of carrier concentration in Pb0.8Sn0.2Te with annealing and growth temperature. Journal of Physics D: Applied Physics, 10. doi:10.1088/0022-3727/10/6/001 |
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| In | (1977) Journal of Physics D: Applied Physics Vol. 10. IOP Publishing |
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