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Bardeleben, H J von (1983) The EPR characterisation of Czochralski grown Bi12SiO20single crystals. Journal of Physics D: Applied Physics, 16. 29-31 doi:10.1088/0022-3727/16/1/006

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Reference TypeJournal (article/letter/editorial)
TitleThe EPR characterisation of Czochralski grown Bi12SiO20single crystals
JournalJournal of Physics D: Applied Physics
AuthorsBardeleben, H J vonAuthor
Year1983 (January 14)Volume16
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/16/1/006Search in ResearchGate
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Mindat Ref. ID5661645Long-form Identifiermindat:1:5:5661645:9
GUID0
Full ReferenceBardeleben, H J von (1983) The EPR characterisation of Czochralski grown Bi12SiO20single crystals. Journal of Physics D: Applied Physics, 16. 29-31 doi:10.1088/0022-3727/16/1/006
Plain TextBardeleben, H J von (1983) The EPR characterisation of Czochralski grown Bi12SiO20single crystals. Journal of Physics D: Applied Physics, 16. 29-31 doi:10.1088/0022-3727/16/1/006
In(1983) Journal of Physics D: Applied Physics Vol. 16. IOP Publishing

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Bardeleben, H J von, Tomlinson, R D (1980) EPR characterisation of p-type CuInSe2single crystals. Journal of Physics C: Solid State Physics, 13 (36). doi:10.1088/0022-3719/13/36/010
Ling, C H (1983) The effective carrier mobility in a polycrystalline layer. Journal of Physics D: Applied Physics, 16. doi:10.1088/0022-3727/16/11/006
Chiu, D M (1983) Electrical properties of n-type ZnSe:I and ZnSe:I:In single crystals. Journal of Physics D: Applied Physics, 16. 2281-2295 doi:10.1088/0022-3727/16/12/006
Williams, J O, Crawford, E S, Miller, B, Patterson, A M, Scott, M D (1983) Photo-electrochemical characterisation of n-ZnSe epitaxial layers grown on n-GaAs substrates. Journal of Physics D: Applied Physics, 16. 2297-2306 doi:10.1088/0022-3727/16/12/007
Sharma, S K, Somerford, D J (1983) The eikonal approximation applied to sizing transparent fibres using the scattered intensity-ratio technique. Journal of Physics D: Applied Physics, 16. 733-742 doi:10.1088/0022-3727/16/5/006
Llewellyn, J P (1983) Form birefringence in ferrofluids. Journal of Physics D: Applied Physics, 16. 95-104 doi:10.1088/0022-3727/16/1/014
Thurzo, I (1983) A corrected formula for transient charging of an insulator in DLTS experiments. Journal of Physics D: Applied Physics, 16. doi:10.1088/0022-3727/16/2/006
Reddy, D Raja, Reddy, B K, Reddy, P J (1983) Photochemical reactions in CdSxSe1-xsingle crystals. Journal of Physics D: Applied Physics, 16. 645-652 doi:10.1088/0022-3727/16/4/024
Coleman, J E (1983) Journal of Physics D: Applied Physics, 16. IOP Publishing. 909-913 doi:10.1088/0022-3727/16/5/022
Ling, C H (1983) On the mobility dip in polycrystalline silicon. Journal of Physics D: Applied Physics, 16. doi:10.1088/0022-3727/16/9/003
Dienemann, H (1983) Material functions of sulphur hexafluoride. Journal of Physics D: Applied Physics, 16. 1651-1671 doi:10.1088/0022-3727/16/9/012
 
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