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Dell, J, Hartnagel, H L, Nassibian, A G (1983) Ultrathin-film ohmic contacts for GaAs FET. Journal of Physics D: Applied Physics, 16. doi:10.1088/0022-3727/16/11/007

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Reference TypeJournal (article/letter/editorial)
TitleUltrathin-film ohmic contacts for GaAs FET
JournalJournal of Physics D: Applied Physics
AuthorsDell, JAuthor
Hartnagel, H LAuthor
Nassibian, A GAuthor
Year1983 (November 14)Volume16
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/16/11/007Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5661689Long-form Identifiermindat:1:5:5661689:3
GUID0
Full ReferenceDell, J, Hartnagel, H L, Nassibian, A G (1983) Ultrathin-film ohmic contacts for GaAs FET. Journal of Physics D: Applied Physics, 16. doi:10.1088/0022-3727/16/11/007
Plain TextDell, J, Hartnagel, H L, Nassibian, A G (1983) Ultrathin-film ohmic contacts for GaAs FET. Journal of Physics D: Applied Physics, 16. doi:10.1088/0022-3727/16/11/007
In(1983) Journal of Physics D: Applied Physics Vol. 16. IOP Publishing

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Janik, E, Triboulet, R (1983) Ohmic contacts to p-type cadmium telluride and cadmium mercury telluride. Journal of Physics D: Applied Physics, 16. 2333-2340 doi:10.1088/0022-3727/16/12/011
Cohen, D. D., Kalkur, T. S., Sutherland, G. J., Nassibian, A. G. (1986) Backscattering analysis of AuGe‐Ni ohmic contacts ofn‐GaAs. Journal of Applied Physics, 60 (9). 3100-3104 doi:10.1063/1.337767
Ling, C H (1983) The effective carrier mobility in a polycrystalline layer. Journal of Physics D: Applied Physics, 16. doi:10.1088/0022-3727/16/11/006
Stampa, A, Kruger, H (1983) Simulation experiments on unipolar arcs. Journal of Physics D: Applied Physics, 16. 2135-2144 doi:10.1088/0022-3727/16/11/016
Kaila, M M, Russell, G J (1998) A photo-thermoelectrical YBCO-BiSb thick film bolometer. Journal of Physics D: Applied Physics, 31. 1987-1990 doi:10.1088/0022-3727/31/16/007
Shimozuma, M, Tagashira, H, Hasegawa, H (1983) The ionisation and attachment coefficients in carbon tetrafluoride. Journal of Physics D: Applied Physics, 16. 971-976 doi:10.1088/0022-3727/16/6/007
Urquijo-Carmona, J de (1983) Ion mobilities and clustering in SF6at high pressures. Journal of Physics D: Applied Physics, 16. 1603-1609 doi:10.1088/0022-3727/16/9/007
Drozdowicz, K, Woznicka, U (1983) Energy corrections in pulsed neutron measurements for cylindrical geometry. Journal of Physics D: Applied Physics, 16. 245-254 doi:10.1088/0022-3727/16/3/007
Williams, J O, Crawford, E S, Miller, B, Patterson, A M, Scott, M D (1983) Photo-electrochemical characterisation of n-ZnSe epitaxial layers grown on n-GaAs substrates. Journal of Physics D: Applied Physics, 16. 2297-2306 doi:10.1088/0022-3727/16/12/007
Ciuffini, V, Sotgiu, A (1983) Lumped parameters for re-entrant resonators. Journal of Physics D: Applied Physics, 16. 2083-2091 doi:10.1088/0022-3727/16/11/011
Bhattacharyya, A, Streetman, B G (1983) Theoretical considerations regarding pulsed laser annealing of a-Ge layers on GaAs. Journal of Physics D: Applied Physics, 16. 2033-2037 doi:10.1088/0022-3727/16/10/029
 
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