Reference Type | Journal (article/letter/editorial) |
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Title | Trap levels in vapour-phase-grown (ZnSe)x(CdTe)1-xsingle crystals |
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Journal | Journal of Physics D: Applied Physics |
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Authors | Chandrasekharam, P | Author |
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Reddy, D R | Author |
Reddy, B K | Author |
Year | 1984 (November 14) | Volume | 17 |
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Publisher | IOP Publishing |
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DOI | doi:10.1088/0022-3727/17/11/014Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5662018 | Long-form Identifier | mindat:1:5:5662018:8 |
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GUID | 0 |
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Full Reference | Chandrasekharam, P, Reddy, D R, Reddy, B K (1984) Trap levels in vapour-phase-grown (ZnSe)x(CdTe)1-xsingle crystals. Journal of Physics D: Applied Physics, 17. 2277-2282 doi:10.1088/0022-3727/17/11/014 |
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Plain Text | Chandrasekharam, P, Reddy, D R, Reddy, B K (1984) Trap levels in vapour-phase-grown (ZnSe)x(CdTe)1-xsingle crystals. Journal of Physics D: Applied Physics, 17. 2277-2282 doi:10.1088/0022-3727/17/11/014 |
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In | (1984) Journal of Physics D: Applied Physics Vol. 17. IOP Publishing |
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