Reference Type | Journal (article/letter/editorial) |
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Title | Low-energy (2-5 keV) argon damage in silicon |
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Journal | Journal of Physics D: Applied Physics |
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Authors | Bangert, U | Author |
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Goodhew, P J | Author |
Jeynes, C | Author |
Wilson, I H | Author |
Year | 1986 (April 14) | Volume | 19 |
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Publisher | IOP Publishing |
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DOI | doi:10.1088/0022-3727/19/4/013Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5662645 | Long-form Identifier | mindat:1:5:5662645:6 |
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|
GUID | 0 |
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Full Reference | Bangert, U, Goodhew, P J, Jeynes, C, Wilson, I H (1986) Low-energy (2-5 keV) argon damage in silicon. Journal of Physics D: Applied Physics, 19. 589-603 doi:10.1088/0022-3727/19/4/013 |
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Plain Text | Bangert, U, Goodhew, P J, Jeynes, C, Wilson, I H (1986) Low-energy (2-5 keV) argon damage in silicon. Journal of Physics D: Applied Physics, 19. 589-603 doi:10.1088/0022-3727/19/4/013 |
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In | (1986) Journal of Physics D: Applied Physics Vol. 19. IOP Publishing |
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