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Cogan, D de, Shah, A K (1986) Stub TLM modelling of heat flow in semiconductor devices. Journal of Physics D: Applied Physics, 19. 721-725 doi:10.1088/0022-3727/19/5/006

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Reference TypeJournal (article/letter/editorial)
TitleStub TLM modelling of heat flow in semiconductor devices
JournalJournal of Physics D: Applied Physics
AuthorsCogan, D deAuthor
Shah, A KAuthor
Year1986 (May 14)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/19/5/006Search in ResearchGate
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Mindat Ref. ID5662661Long-form Identifiermindat:1:5:5662661:4
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Full ReferenceCogan, D de, Shah, A K (1986) Stub TLM modelling of heat flow in semiconductor devices. Journal of Physics D: Applied Physics, 19. 721-725 doi:10.1088/0022-3727/19/5/006
Plain TextCogan, D de, Shah, A K (1986) Stub TLM modelling of heat flow in semiconductor devices. Journal of Physics D: Applied Physics, 19. 721-725 doi:10.1088/0022-3727/19/5/006
In(1986) Journal of Physics D: Applied Physics Vol. 19. IOP Publishing

See Also

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Cogan, D de, Henini, M (1987) TLM modelling of the thermal behaviour of conducting films on insulating substrates. Journal of Physics D: Applied Physics, 20. 1445-1450 doi:10.1088/0022-3727/20/11/012
Williams, E W, Patel, H C, Cogan, D de, Pulko, S H (1996) TLM modelling of thermal processes in magneto-optic multi-layered media. Journal of Physics D: Applied Physics, 29. 1124-1132 doi:10.1088/0022-3727/29/5/003
Vardigans, S V G, Cogan, D de (1986) A bipolar pulse tester for semiconductor devices. Journal of Physics E: Scientific Instruments, 19 (12). 1016-1019 doi:10.1088/0022-3735/19/12/005
Cogan, D de, John, S A (1982) The calculation of temperature distribution in punch-through structures during pulsed operation using the transmission line modelling (TLM) method. Journal of Physics D: Applied Physics, 15. 1979-1990 doi:10.1088/0022-3727/15/10/017
Marriott, P (1986) A liquid metal ion source analysis system. Journal of Physics D: Applied Physics, 19. doi:10.1088/0022-3727/19/6/006
Sugimura, A, Patzak, E, Meissner, P (1986) Homogeneous linewidth and linewidth enhancement factor for a GaAs semiconductor laser. Journal of Physics D: Applied Physics, 19. 7-16 doi:10.1088/0022-3727/19/1/006
Burke, S K (1986) Impedance of a horizontal coil above a conducting half-space. Journal of Physics D: Applied Physics, 19. 1159-1173 doi:10.1088/0022-3727/19/7/006
Scruby, C B, Stacey, K A, Baldwin, G R (1986) Defect characterisation in three dimensions by acoustic emission. Journal of Physics D: Applied Physics, 19. 1597-1612 doi:10.1088/0022-3727/19/9/006
Cogan, D de, John, S A (1985) A two-dimensional transmission line matrix model for heat flow in power semiconductors. Journal of Physics D: Applied Physics, 18. 507-516 doi:10.1088/0022-3727/18/3/017
Luttrell, S P, Oliver, C J (1986) Prior knowledge in synthetic-aperture radar processing. Journal of Physics D: Applied Physics, 19. 333-356 doi:10.1088/0022-3727/19/3/006
Kobayashi, S, Suzuki, K (1986) Energy distributions of carriers formed in a prebreakdown vacuum gap. Journal of Physics D: Applied Physics, 19. 825-834 doi:10.1088/0022-3727/19/5/014
 
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