Shimozuma, M, Tagashira, H (1986) Measurement of the ionisation and attachment coefficients in monosilane and disilane. Journal of Physics D: Applied Physics, 19. doi:10.1088/0022-3727/19/9/002
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Measurement of the ionisation and attachment coefficients in monosilane and disilane | ||
Journal | Journal of Physics D: Applied Physics | ||
Authors | Shimozuma, M | Author | |
Tagashira, H | Author | ||
Year | 1986 (September 14) | Volume | 19 |
Publisher | IOP Publishing | ||
DOI | doi:10.1088/0022-3727/19/9/002Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5662760 | Long-form Identifier | mindat:1:5:5662760:4 |
GUID | 0 | ||
Full Reference | Shimozuma, M, Tagashira, H (1986) Measurement of the ionisation and attachment coefficients in monosilane and disilane. Journal of Physics D: Applied Physics, 19. doi:10.1088/0022-3727/19/9/002 | ||
Plain Text | Shimozuma, M, Tagashira, H (1986) Measurement of the ionisation and attachment coefficients in monosilane and disilane. Journal of Physics D: Applied Physics, 19. doi:10.1088/0022-3727/19/9/002 | ||
In | (1986) Journal of Physics D: Applied Physics Vol. 19. IOP Publishing |
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