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Bhave, Tejashree M, Bhoraskar, S V, Kulkarni, Shriram, Bhoraskar, V N (1996) Improvement in the photoluminescence efficiency of porous silicon using high-energy silicon ion irradiation. Journal of Physics D: Applied Physics, 29. 462-465 doi:10.1088/0022-3727/29/2/026

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Reference TypeJournal (article/letter/editorial)
TitleImprovement in the photoluminescence efficiency of porous silicon using high-energy silicon ion irradiation
JournalJournal of Physics D: Applied Physics
AuthorsBhave, Tejashree MAuthor
Bhoraskar, S VAuthor
Kulkarni, ShriramAuthor
Bhoraskar, V NAuthor
Year1996 (February 14)Volume29
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/29/2/026Search in ResearchGate
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Mindat Ref. ID5666144Long-form Identifiermindat:1:5:5666144:0
GUID0
Full ReferenceBhave, Tejashree M, Bhoraskar, S V, Kulkarni, Shriram, Bhoraskar, V N (1996) Improvement in the photoluminescence efficiency of porous silicon using high-energy silicon ion irradiation. Journal of Physics D: Applied Physics, 29. 462-465 doi:10.1088/0022-3727/29/2/026
Plain TextBhave, Tejashree M, Bhoraskar, S V, Kulkarni, Shriram, Bhoraskar, V N (1996) Improvement in the photoluminescence efficiency of porous silicon using high-energy silicon ion irradiation. Journal of Physics D: Applied Physics, 29. 462-465 doi:10.1088/0022-3727/29/2/026
In(1996) Journal of Physics D: Applied Physics Vol. 29. IOP Publishing

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Chaudhari, Prajakta S., Bhave, Tejashree M., Kanjilal, D., Bhoraskar, S. V. (2003) Swift heavy ion induced growth of nanocrystalline silicon in silicon oxide. Journal of Applied Physics, 93 (6). 3486-3489 doi:10.1063/1.1542913
Kulkarni, A A, Karve, P, Bhave, T, Bhoraskar, S V, Ogale, S B, Kanetkar, S M, Ayyub, P, Purandare, S C (1995) Integration of porous silicon with CVD diamond. Journal of Physics D: Applied Physics, 28. 1400-1403 doi:10.1088/0022-3727/28/7/018
Bhoraskar, S V, Bhave, Tejashree, Railkar, T A (1994) Crystallite-size-dependent characteristics of porous silicon. Bulletin of Materials Science, 17. 523-531 doi:10.1007/bf02757898
De Crescenzi, M., Castrucci, P., Scarselli, M., Diociaiuti, M., Chaudhari, Prajakta S., Balasubramanian, C., Bhave, Tejashree M., Bhoraskar, S. V. (2005) Experimental imaging of silicon nanotubes. Applied Physics Letters, 86 (23). 231901pp. doi:10.1063/1.1943497
Bhave, Tejashree M., Bhoraskar, S.V., Singh, Prabhat, Bhoraskar, V.N. (1997) Radiation induced recrystallisation and enhancement in photoluminescence from porous silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 132 (3). 409-417 doi:10.1016/s0168-583x(97)80066-3
Chavan, S. T., Bhave, P. S., Bhoraskar, V. N., Kanjilal, D. (1995) Damage induced by 90 MeV silicon ions in crystalline silicon. Journal of Applied Physics, 78 (4). 2328-2332 doi:10.1063/1.360150
Chaudhari, Prajakta S., Bhave, Tejashree M., Pasricha, Renu, Singh, Fouran, Kanjilal, D., Bhoraskar, S.V. (2005) Controlled growth of silicon nanocrystallites in silicon oxide matrix using 150MeV Ag ion irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 239 (3). 185-190 doi:10.1016/j.nimb.2005.04.069
Railkar, Tarak A., Bhoraskar, S. V., Dhole, S. D., Bhoraskar, V. N. (1993) Defect studies in oxygen‐ion‐irradiated silicon‐based metal‐insulator‐semiconductor structures. Journal of Applied Physics, 74 (7). 4343-4346 doi:10.1063/1.354400
Majeed, Riyadh M A Abdul, Purohit, Vishwas, Bhide, Rajesh, Mandale, A B, Bhoraskar, S V, Bhoraskar, V N (2006) Nitridation of high speed steel by electron cyclotron resonance plasma. Journal of Physics D: Applied Physics, 39. 2109-2113 doi:10.1088/0022-3727/39/10/022
Majeed, Riyadh M A Abdul, Datar, A, Bhoraskar, S V, Alegaonkar, P S, Bhoraskar, V N (2006) Dielectric constant and surface morphology of the elemental diffused polyimide. Journal of Physics D: Applied Physics, 39. 4855-4859 doi:10.1088/0022-3727/39/22/017
Padgaonkar, S, Dhole, S D, Bhoraskar, V N (1991) Comparison of 14 MeV neutron-induced and 1 MeV electron-induced radiation damage in crystalline silicon. Journal of Physics D: Applied Physics, 24. 702-705 doi:10.1088/0022-3727/24/5/011
 
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