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Khludkov, S S, Stepanov, V E, Tolbanov, O P (1996) Radiation hardness of semiconductor detectors for high-energy physics. Journal of Physics D: Applied Physics, 29. 1559-1563 doi:10.1088/0022-3727/29/6/022

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Reference TypeJournal (article/letter/editorial)
TitleRadiation hardness of semiconductor detectors for high-energy physics
JournalJournal of Physics D: Applied Physics
AuthorsKhludkov, S SAuthor
Stepanov, V EAuthor
Tolbanov, O PAuthor
Year1996 (June 14)Volume29
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/29/6/022Search in ResearchGate
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Mindat Ref. ID5666301Long-form Identifiermindat:1:5:5666301:3
GUID0
Full ReferenceKhludkov, S S, Stepanov, V E, Tolbanov, O P (1996) Radiation hardness of semiconductor detectors for high-energy physics. Journal of Physics D: Applied Physics, 29. 1559-1563 doi:10.1088/0022-3727/29/6/022
Plain TextKhludkov, S S, Stepanov, V E, Tolbanov, O P (1996) Radiation hardness of semiconductor detectors for high-energy physics. Journal of Physics D: Applied Physics, 29. 1559-1563 doi:10.1088/0022-3727/29/6/022
In(1996) Journal of Physics D: Applied Physics Vol. 29. IOP Publishing

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Khludkov, S.S., Stepanov, V.E., Tolbanov, O.P. (1997) Proton-induced displacement damage in GaAs and radiation-hardness of semiconductor detectors for high energy physics. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 395 (1). 60-64 doi:10.1016/s0168-9002(97)00625-6
Chmill, V B, Chuntonov, A V, Krupnyi, G I, Rastsvetalov, Y, Statcenko, G N, Vorobiev, A P, Yanovich, A A, Khludkov, S S, Koretski, A A, Potapov, A I, Tolbanov, O P (1995) Radiation resistance of GaAs structures based on pi - nu junctions. Journal of Physics D: Applied Physics, 28. 559-564 doi:10.1088/0022-3727/28/3/017
Pickles, C S J, Field, J E (1996) The laboratory simulation of thermal shock failure. Journal of Physics D: Applied Physics, 29. 436-441 doi:10.1088/0022-3727/29/2/022
Sabchevski, S P, Mladenov, G M, Wojcicki, S, Dabek, J (1996) An analysis of electron guns for welding. Journal of Physics D: Applied Physics, 29. 1446-1453 doi:10.1088/0022-3727/29/6/006
Gilmore, R S (1996) Industrial ultrasonic imaging and microscopy. Journal of Physics D: Applied Physics, 29. 1389-1417 doi:10.1088/0022-3727/29/6/001
Prut, V V, Shybaev, S A (1996) High rate deformation of metallic liner and its dislocation description. Journal of Physics D: Applied Physics, 29. 3071-3078 doi:10.1088/0022-3727/29/12/020
Khludkov, S. S., Tolbanov, O. P., Koretskii, A. V. (1986) Gallium arsenide avalanche-type S-diode based on a n+-?-?-n structure. Soviet Physics Journal, 29. 298-301 doi:10.1007/bf00893001
Sinkevich, O A, Sosnin, V E (1996) Plasma structure formation in a free-localized high-pressure microwave discharge. Journal of Physics D: Applied Physics, 29. 2609-2626 doi:10.1088/0022-3727/29/10/012
Khludkov, S. S., Tolbanov, O. P., Budnitskii, D. L. (1998) Gallium arsenide structures with deep centers and ionized radiation detectors based on them. Russian Physics Journal, 41 (8). 768-772 doi:10.1007/bf02510641
(1996) Editorial. Journal of Physics D: Applied Physics, 29. doi:10.1088/0022-3727/29/7/001
(1996) Foreword. Journal of Physics D: Applied Physics, 29. doi:10.1088/0022-3727/29/7/002
 
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