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Miao, P, Robinson, A W, Palmer, R E (1997) Nano-machining of films deposited on H-passivated Si(111). Journal of Physics D: Applied Physics, 30. 3307-3311 doi:10.1088/0022-3727/30/24/007

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Reference TypeJournal (article/letter/editorial)
TitleNano-machining of films deposited on H-passivated Si(111)
JournalJournal of Physics D: Applied Physics
AuthorsMiao, PAuthor
Robinson, A WAuthor
Palmer, R EAuthor
Year1997 (December 21)Volume30
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/30/24/007Search in ResearchGate
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Mindat Ref. ID5666732Long-form Identifiermindat:1:5:5666732:9
GUID0
Full ReferenceMiao, P, Robinson, A W, Palmer, R E (1997) Nano-machining of films deposited on H-passivated Si(111). Journal of Physics D: Applied Physics, 30. 3307-3311 doi:10.1088/0022-3727/30/24/007
Plain TextMiao, P, Robinson, A W, Palmer, R E (1997) Nano-machining of films deposited on H-passivated Si(111). Journal of Physics D: Applied Physics, 30. 3307-3311 doi:10.1088/0022-3727/30/24/007
In(1997) Journal of Physics D: Applied Physics Vol. 30. IOP Publishing

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Miao, P, Robinson, A W, Palmer, R E (1998) Nano-machining of silicon phthalocyanine dichloride films on H-passivated Si(111). Journal of Physics D: Applied Physics, 31. doi:10.1088/0022-3727/31/9/001
Grillo, S E, Field, J E (1997) The polishing of diamond. Journal of Physics D: Applied Physics, 30. 202-209 doi:10.1088/0022-3727/30/2/007
Green, N G, Morgan, H (1997) Dielectrophoretic separation of nano-particles. Journal of Physics D: Applied Physics, 30. doi:10.1088/0022-3727/30/11/001
Chand, Suresh, Sharma, G D, Chandra, Subhas, Chandra, R (1997) Space-charge distributed relaxations in vacuum-deposited polyvinyl fluoride films. Journal of Physics D: Applied Physics, 30. 1243-1247 doi:10.1088/0022-3727/30/8/014
Williams, P R, Williams, P M, Brown, S W J (1997) Pressure waves arising from the oscillation of cavitation bubbles under dynamic stressing. Journal of Physics D: Applied Physics, 30. 1197-1206 doi:10.1088/0022-3727/30/8/007
Xu, Niankan, Yin, Dachuan, Liu, Zhengtang, Zheng, Xiulin (1997) The effects of applied bias voltage on structure and hydrogen content of a-C:H films. Journal of Physics D: Applied Physics, 30. 763-768 doi:10.1088/0022-3727/30/5/007
Górski, P, Kin, M, Kucharczyk, W (1997) On the application of a generalized form of Miller's coefficient to nonlinear refractive indices in partially ionic crystals. Journal of Physics D: Applied Physics, 30. 1111-1114 doi:10.1088/0022-3727/30/7/007
Dupont, G, Caquineau, H, Despax, B, Berjoan, R, Dollet, A (1997) Structural properties of N-rich a-Si - N:H films with a low electron-trapping rate. Journal of Physics D: Applied Physics, 30. 1064-1076 doi:10.1088/0022-3727/30/7/002
Dähne-Prietsch, M, Manke, I, Kalka, T, Wen, H J, Kaindl, G (1997) Low density of states at the epitaxial - Si(111) interface. Journal of Physics D: Applied Physics, 30. doi:10.1088/0022-3727/30/12/002
(1997) Editorial. Journal of Physics D: Applied Physics, 30. doi:10.1088/0022-3727/30/10/001
(1997) Foreword. Journal of Physics D: Applied Physics, 30. doi:10.1088/0022-3727/30/5/002
 
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