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Watanabe, M O, Kawashima, N, Kanayama, T (1998) Ambient gas dependence of hydrogenated silicon clusters grown in an ion trap. Journal of Physics D: Applied Physics, 31. doi:10.1088/0022-3727/31/18/002

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Reference TypeJournal (article/letter/editorial)
TitleAmbient gas dependence of hydrogenated silicon clusters grown in an ion trap
JournalJournal of Physics D: Applied Physics
AuthorsWatanabe, M OAuthor
Kawashima, NAuthor
Kanayama, TAuthor
Year1998 (September 21)Volume31
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/31/18/002Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5667059Long-form Identifiermindat:1:5:5667059:0
GUID0
Full ReferenceWatanabe, M O, Kawashima, N, Kanayama, T (1998) Ambient gas dependence of hydrogenated silicon clusters grown in an ion trap. Journal of Physics D: Applied Physics, 31. doi:10.1088/0022-3727/31/18/002
Plain TextWatanabe, M O, Kawashima, N, Kanayama, T (1998) Ambient gas dependence of hydrogenated silicon clusters grown in an ion trap. Journal of Physics D: Applied Physics, 31. doi:10.1088/0022-3727/31/18/002
In(1998) Journal of Physics D: Applied Physics Vol. 31. IOP Publishing

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Borchi, E, Bruzzi, M, Pirollo, S, Sciortino, S (1998) A method of TSC analysis of shallow levels applied to silicon. Journal of Physics D: Applied Physics, 31. doi:10.1088/0022-3727/31/24/002
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Giaddui, T, Earwaker, L G, Forcey, K S, Loni, A, Canham, L T (1998) Improved capping layers for suppression of ambient ageing in porous silicon. Journal of Physics D: Applied Physics, 31. 1131-1136 doi:10.1088/0022-3727/31/10/001
Shitamoto, H, Nagatani, T (1998) The effect of migration in electrochemical deposition on a horizontal plate. Journal of Physics D: Applied Physics, 31. 1137-1143 doi:10.1088/0022-3727/31/10/002
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